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K1S1616BCA-FI85

Description
Standard SRAM, 1MX16, 85ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, FBGA-48
Categorystorage    storage   
File Size141KB,10 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K1S1616BCA-FI85 Overview

Standard SRAM, 1MX16, 85ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, FBGA-48

K1S1616BCA-FI85 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSAMSUNG
package instructionVFBGA, BGA48,6X8,30
Reach Compliance Codecompliant
Maximum access time85 ns
I/O typeCOMMON
JESD-30 codeR-PBGA-B48
length8 mm
memory density16777216 bit
Memory IC TypeSTANDARD SRAM
memory width16
Humidity sensitivity level1
Number of functions1
Number of terminals48
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize1MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Encapsulate equivalent codeBGA48,6X8,30
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply1.8/2 V
Certification statusNot Qualified
Maximum seat height1 mm
Minimum standby current1.7 V
Maximum slew rate0.03 mA
Maximum supply voltage (Vsup)2.1 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width6 mm
Preliminary
K1S1616BCA
Document Title
1Mx16 bit Page Mode Uni-Transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0
Initial Draft
Draft Date
Remark
December 12, 2003 Preliminary
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
-1-
Revision 0.0
December 2003

K1S1616BCA-FI85 Related Products

K1S1616BCA-FI85 K1S1616BCA-BI85 K1S1616BCA-BI70 K1S1616BCA-FI70
Description Standard SRAM, 1MX16, 85ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, FBGA-48 Standard SRAM, 1MX16, 85ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, LEAD FREE, FBGA-48 Standard SRAM, 1MX16, 70ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, LEAD FREE, FBGA-48 Standard SRAM, 1MX16, 70ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, FBGA-48
Is it lead-free? Contains lead Lead free Lead free Contains lead
Is it Rohs certified? incompatible conform to conform to incompatible
Maker SAMSUNG SAMSUNG SAMSUNG SAMSUNG
package instruction VFBGA, BGA48,6X8,30 VFBGA, BGA48,6X8,30 VFBGA, BGA48,6X8,30 6 X 7 MM, 0.75 MM PITCH, FBGA-48
Reach Compliance Code compliant compliant compliant compliant
Maximum access time 85 ns 85 ns 70 ns 70 ns
I/O type COMMON COMMON COMMON COMMON
JESD-30 code R-PBGA-B48 R-PBGA-B48 R-PBGA-B48 R-PBGA-B48
length 8 mm 8 mm 8 mm 8 mm
memory density 16777216 bit 16777216 bit 16777216 bit 16777216 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 16 16 16 16
Humidity sensitivity level 1 1 1 1
Number of functions 1 1 1 1
Number of terminals 48 48 48 48
word count 1048576 words 1048576 words 1048576 words 1048576 words
character code 1000000 1000000 1000000 1000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C
organize 1MX16 1MX16 1MX16 1MX16
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code VFBGA VFBGA VFBGA VFBGA
Encapsulate equivalent code BGA48,6X8,30 BGA48,6X8,30 BGA48,6X8,30 BGA48,6X8,30
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 225 225 225 225
power supply 1.8/2 V 1.8/2 V 1.8/2 V 1.8/2 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1 mm 1 mm 1 mm 1 mm
Minimum standby current 1.7 V 1.7 V 1.7 V 1.7 V
Maximum slew rate 0.03 mA 0.03 mA 0.03 mA 0.03 mA
Maximum supply voltage (Vsup) 2.1 V 2.1 V 2.1 V 2.1 V
Minimum supply voltage (Vsup) 1.7 V 1.7 V 1.7 V 1.7 V
Nominal supply voltage (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V
surface mount YES YES YES YES
technology CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal form BALL BALL BALL BALL
Terminal pitch 0.75 mm 0.75 mm 0.75 mm 0.75 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 6 mm 6 mm 6 mm 6 mm
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