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KFG1216D2A-FIB50

Description
Flash, 32MX16, 76ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63
Categorystorage    storage   
File Size1MB,114 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

KFG1216D2A-FIB50 Overview

Flash, 32MX16, 76ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63

KFG1216D2A-FIB50 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeBGA
package instructionVFBGA,
Contacts63
Reach Compliance Codecompliant
ECCN code3A991.B.1.A
Maximum access time76 ns
Other featuresSYNCHRONOUS BURST OPERATION IS POSSIBLE
JESD-30 codeR-PBGA-B63
length12 mm
memory density536870912 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals63
word count33554432 words
character code32000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize32MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Programming voltage2.7 V
Certification statusNot Qualified
Maximum seat height1 mm
Maximum supply voltage (Vsup)2.9 V
Minimum supply voltage (Vsup)2.4 V
Nominal supply voltage (Vsup)2.65 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
width9.5 mm
OneNAND512(KFG1216x2A-xxB6)
FLASH MEMORY
OneNAND
TM
Specification
Density
512Mb
Part No.
KFG1216Q2A
KFG1216D2A
KFG1216U2A
V
CC
(core & IO)
1.8V(1.7V~1.95V)
2.65V(2.4V~2.9V)
3.3V(2.7V~3.6V)
Temperature
Extended
Extended
Industrial
PKG
63FBGA(LF)/63FBGA
63FBGA(LF)/63FBGA
63FBGA(LF)/63FBGA
Version: Ver. 1.0
Date: May 17th, 2005
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