KFG1216Q2A-DEB50 datasheet, PDF

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KFG1216Q2A-DEB50: DescriptionFlash, 32MX16, 76ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63; Categorystorage storage; File Size1MB，114 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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KFG1216Q2A-DEB50 Overview

Flash, 32MX16, 76ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63

KFG1216Q2A-DEB50 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	VFBGA, BGA63,10X12,32
Contacts	63
Reach Compliance Code	compliant
ECCN code	3A991.B.1.A
Maximum access time	76 ns
Other features	SYNCHRONOUS BURST OPERATION IS POSSIBLE
command user interface	YES
Data polling	NO
JESD-30 code	R-PBGA-B63
JESD-609 code	e1
length	12 mm
memory density	536870912 bit
Memory IC Type	FLASH
memory width	16
Humidity sensitivity level	3
Number of functions	1
Number of departments/size	512
Number of terminals	63
word count	33554432 words
character code	32000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-30 °C
organize	32MX16
Package body material	PLASTIC/EPOXY
encapsulated code	VFBGA
Encapsulate equivalent code	BGA63,10X12,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
page size	1K words
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	1.8 V
Programming voltage	1.8 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1 mm
Department size	64K
Maximum standby current	0.00005 A
Maximum slew rate	0.04 mA
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
switch bit	NO
type	SLC NAND TYPE
width	9.5 mm

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OneNAND512(KFG1216x2A-xxB5)

FLASH MEMORY

OneNAND

Specification

Density

Part No.

KFG1216Q2A-DEB5

(core & IO)

1.8V(1.7V~1.95V)

3.3V(2.7V~3.6V)

Temperature

Extended

Industrial

PKG

63FBGA(LF)

63FBGA

63FBGA(LF)

63FBGA

512Mb

KFG1216Q2A-FEB5

KFG1216U2A-DIB5

KFG1216U2A-FIB5

Version: Ver. 1.2

Date: Dec. 23, 2005

KFG1216Q2A-DEB50 Related Products

	KFG1216Q2A-DEB50	KFG1216Q2A-FEB50	KFG1216U2A-FIB50	KFG1216U2A-DIB5T	KFG1216U2A-DIB50	KFG1216U2A-FIB5T
Description	Flash, 32MX16, 76ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63	Flash, 32MX16, 76ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-63	Flash, 32MX16, 76ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-63	Flash, 32MX16, 14.5ns, PBGA63,	Flash, 32MX16, 76ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63	Flash, 32MX16, 14.5ns, PBGA63,
Is it Rohs certified?	conform to	incompatible	incompatible	conform to	conform to	incompatible
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
Maximum access time	76 ns	76 ns	76 ns	14.5 ns	76 ns	14.5 ns
command user interface	YES	YES	YES	YES	YES	YES
Data polling	NO	NO	NO	NO	NO	NO
JESD-30 code	R-PBGA-B63	R-PBGA-B63	R-PBGA-B63	R-PBGA-B63	R-PBGA-B63	R-PBGA-B63
memory density	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit
Memory IC Type	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH
memory width	16	16	16	16	16	16
Number of departments/size	512	512	512	512	512	512
Number of terminals	63	63	63	63	63	63
word count	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words
character code	32000000	32000000	32000000	32000000	32000000	32000000
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-30 °C	-30 °C	-40 °C	-40 °C	-40 °C	-40 °C
organize	32MX16	32MX16	32MX16	32MX16	32MX16	32MX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	VFBGA	VFBGA	VFBGA	FBGA	VFBGA	FBGA
Encapsulate equivalent code	BGA63,10X12,32	BGA63,10X12,32	BGA63,10X12,32	BGA63,10X12,32	BGA63,10X12,32	BGA63,10X12,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, FINE PITCH
page size	1K words	1K words	1K words	1K words	1K words	1K words
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	1.8 V	1.8 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
ready/busy	YES	YES	YES	YES	YES	YES
Department size	64K	64K	64K	64K	64K	64K
Maximum standby current	0.00005 A	0.00005 A	0.00008 A	0.00008 A	0.00008 A	0.00008 A
Maximum slew rate	0.04 mA	0.04 mA	0.04 mA	0.04 mA	0.04 mA	0.04 mA
Nominal supply voltage (Vsup)	1.8 V	1.8 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	OTHER	OTHER	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
switch bit	NO	NO	NO	NO	NO	NO
type	SLC NAND TYPE	SLC NAND TYPE	SLC NAND TYPE	MLC NAND TYPE	SLC NAND TYPE	MLC NAND TYPE
Parts packaging code	BGA	BGA	BGA	-	BGA	-
package instruction	VFBGA, BGA63,10X12,32	VFBGA, BGA63,10X12,32	VFBGA, BGA63,10X12,32	-	VFBGA, BGA63,10X12,32	-
Contacts	63	63	63	-	63	-
ECCN code	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	-	3A991.B.1.A	-
Other features	SYNCHRONOUS BURST OPERATION IS POSSIBLE	SYNCHRONOUS BURST OPERATION IS POSSIBLE	SYNCHRONOUS BURST OPERATION IS POSSIBLE	-	SYNCHRONOUS BURST OPERATION IS POSSIBLE	-
length	12 mm	12 mm	12 mm	-	12 mm	-
Humidity sensitivity level	3	1	1	-	3	-
Number of functions	1	1	1	-	1	-
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-	ASYNCHRONOUS	-
Peak Reflow Temperature (Celsius)	260	225	225	-	260	-
Programming voltage	1.8 V	1.8 V	2.7 V	-	2.7 V	-
Maximum seat height	1 mm	1 mm	1 mm	-	1 mm	-
Maximum supply voltage (Vsup)	1.95 V	1.95 V	3.6 V	-	3.6 V	-
Minimum supply voltage (Vsup)	1.7 V	1.7 V	2.7 V	-	2.7 V	-
Maximum time at peak reflow temperature	40	NOT SPECIFIED	NOT SPECIFIED	-	40	-
width	9.5 mm	9.5 mm	9.5 mm	-	9.5 mm	-

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