K4N56163QF-ZC370 datasheet, PDF

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K4N56163QF-ZC370: DescriptionDDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, LEAD FREE, FBGA-84; Categorystorage storage; File Size1MB，72 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4N56163QF-ZC370 Overview

DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, LEAD FREE, FBGA-84

K4N56163QF-ZC370 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	TFBGA,
Contacts	84
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.5 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-PBGA-B84
JESD-609 code	e1
length	13 mm
memory density	268435456 bit
Memory IC Type	DDR DRAM
memory width	16
Humidity sensitivity level	2
Number of functions	1
Number of ports	1
Number of terminals	84
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
organize	16MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum seat height	1.2 mm
self refresh	YES
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
width	11 mm

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K4N56163QF-GC

256M gDDR2 SDRAM

256Mbit gDDR2 SDRAM

4M x 16Bit x 4 Banks

gDDR2 SDRAM

with Differential Data Strobe and DLL

Revision 1.5

March 2005

Samsung Electronics reserves the right to change products or specification without notice.

- 1 -

Rev 1.5 (Mar. 2005)

K4N56163QF-ZC370 Related Products

	K4N56163QF-ZC370	K4N56163QF-ZC300	K4N56163QF-GC370	K4N56163QF-GC300
Description	DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, LEAD FREE, FBGA-84	DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, LEAD FREE, FBGA-84	DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, FBGA-84	DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, FBGA-84
Is it Rohs certified?	conform to	conform to	incompatible	incompatible
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
Parts packaging code	BGA	BGA	BGA	BGA
package instruction	TFBGA,	TFBGA,	TFBGA,	TFBGA,
Contacts	84	84	84	84
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	0.5 ns	0.45 ns	0.5 ns	0.45 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 code	R-PBGA-B84	R-PBGA-B84	R-PBGA-B84	R-PBGA-B84
JESD-609 code	e1	e1	e0	e0
length	13 mm	13 mm	13 mm	13 mm
memory density	268435456 bit	268435456 bit	268435456 bit	268435456 bit
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	16	16	16	16
Number of functions	1	1	1	1
Number of ports	1	1	1	1
Number of terminals	84	84	84	84
word count	16777216 words	16777216 words	16777216 words	16777216 words
character code	16000000	16000000	16000000	16000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
organize	16MX16	16MX16	16MX16	16MX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	TFBGA	TFBGA	TFBGA
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260	260	240	240
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm
self refresh	YES	YES	YES	YES
Maximum supply voltage (Vsup)	1.9 V	1.9 V	1.9 V	1.9 V
Minimum supply voltage (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	40	40	30	30
width	11 mm	11 mm	11 mm	11 mm

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