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BCW66G

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size78KB,1 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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BCW66G Overview

Transistor

BCW66G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
package instruction,
Reach Compliance Codecompliant
Maximum collector current (IC)0.8 A
ConfigurationSingle
Minimum DC current gain (hFE)50
JESD-609 codee3
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.33 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
G e n e r a l
Semiconductor
Diodes and Transistors
Small
Signal
Switching
Diodes
Mfr.Õs
Type
Forward
Voltage @
Reverse Forward Forward
Current Current
Voltage
VBR (V) IF Max. VF max
(mA)
@ IF
SOT-23¤
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
BAS19
BAS20
BAS21
Ñ
SOT-23Æ
Ñ
Ñ
Ñ
Ñ
BAV99
BAV70
BAW56
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
MMBD7000
Ñ
Ñ
Ñ
GSD2004S
35
50
50
60
70
70
70
70
75
75
75
100
100
100
100
100
150
200
300
150
200
200
200
250
250
250
200
150
250
150
75/200
150
150
200
200
200
200
200
mV
1.00
1.00
1.15
1.00
1.00
1.00
1.00
1.10
1.00
1.00
1.00
1.00
1.00
1.00
1.10
1.00
1.00
1.00
1.00
mA
30
200
200
100
50
50
50
100
50
50
100
10
10
100
100
100
100
100
100
Visit General SemiconductorÕs Website at www.gensemi.com
GENFET
ª
Power MOSFETs
N-Channel MOSFETs
Mfr.Õs
Type
TO-220
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
GFP50N03
GFP70N03
GFP75N03
Ñ
Ñ
* P-Channel
TO-252
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
GFD30N03
GFD50N03
TO-263
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
GFB50N03
GFB70N03
GFB75N03
Ñ
Ñ
SO-8
GF2208
GF2524
GF2918
GF4410
GF4412
GF4420
GF4435*
GF4450
GF4936
GF9410
GF9926
Ñ
Ñ
Ñ
Ñ
Ñ
Single
Dual
Dual
Single
Single
Single
Single
Single
Dual
Single
Dual
Single
Single
Single
Single
Single
Config.
Power
(W)
2.5
2.0
2.0
2.5
2.5
2.5
2.5
2.5
2.0
2.5
2.0
62.5
62.5
62.5
38.0
50.0
Current
(A)
13.0
5.8/
7.8
7.8
10.0
7.0
12.5
8.0
7.5
5.8
7.0
6.0
50.0
70.0
75.0
40.0
58.0
Volt
(V)
30
30
30
30
30
30
30
60
30
30
20
30
30
30
30
30
RDS (on)
(½)
0.0080
0.0370/
0.0180
0.0180
0.0135
0.0280
0.0090
0.0200
0.0240
0.0370
0.0300
0.0300
0.0130
0.0080
0.0065
0.0150
0.0090
Leaded
DO-35* SOD-80C SOD-323¥
BAW75
1N4150
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
1N4151
Ñ
BAW76
1N914
1N4148
1N4448
Ñ
BAV19
BAV20
BAV21
Ñ
Ñ
LL4150à
Ñ
BAV100 
Ñ
Ñ
Ñ
Ñ
LL4151à
Ñ
Ñ
Ñ
LL4148à
LL4448à
Ñ
BAV101 
BAV102 
BAV103 
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
BAS16WS
Ñ
Ñ
1N4148WS
Ñ
Ñ
BAV19WS
BAV20WS
BAV21WS
Ñ
Surface Mount
SOD-123 
Ñ
Ñ
1N4150W
Ñ
Ñ
Ñ
Ñ
Ñ
1N4151W
BAS16D
Ñ
Ñ
1N4148W
1N4448W
Ñ
BAV19W
BAV20W
BAV21W
GSD200SW
SOT-23×
Ñ
Ñ
Ñ
Ñ
BAL99
Ñ
Ñ
MMBD6050
Ñ
BAS16
Ñ
MMBD914
IMBD4148
IMBD4448
Ñ
Ñ
Ñ
Ñ
Ñ
*500 mW.  400 mW. à500 mW. ¥200 mW. ×Single, 250 mW. ¤Single, 350 mW. ÆDual, 350 mW.
Small Signal Schottky Diodes
Small
Signal
Bipolar
Transistors
Forward
Voltage @
Forward
Current
V
F
max @ I
F
mV
10
20
30
30
30
30
30
30
30
30
30
40
40
40
40
40
50
50
60
70
70
70
100
600
370
400
400
400
400
330
400
370
260
300
390
380
380
380
370
400
380
410
410
410
410
450
mA
10
20
10
10
10
10
2
10
20
2
2
1
1
1
1
20
1
1
1
1
1
1
10
Mfr.Õs
Type
TO-92*
NPN
2N3904
2N4401
MPS2222A
BC547A
BC547B
BC547C
Ñ
Ñ
Ñ
BC337-16
BC337-25
BC337-40
Ñ
MPSA06
PNP
2N3906
2N4403
MPS2907A
BC557A
BC557B
BC557C
Ñ
Ñ
Ñ
BC327-16
BC327-25
BC327-40
Ñ
MPSA56
NPN
MMBT3904
MMBT4401
MMBT2222A
BC847A
BC847B
BC847C
BC817-16
BC817-25
BC817-40
Ñ
Ñ
Ñ
BCW66G
MMBTA06
SOT-23 
PNP
MMBT3906
MMBT4403
MMBT2907A
BC857A
BC857B
BC857C
BC807-16
BC807-25
BC807-40
Ñ
Ñ
Ñ
BCW68G
MMBTA56
40
40
40
45
45
45
45
45
45
45
45
45
45
80
200
600
600
100
100
100
500
500
500
800
800
800
800
500
V
CEO
(V)
I
C
(mA)
Min.
100
Ñ
Ñ
Ñ
Ñ
Ñ
100
160
250
100
160
250
160
Ñ
h
FE
Typ.
Ñ
100
100
220
330
600
Ñ
Ñ
Ñ
160
250
400
Ñ
100
Max.
300
300
300
Ñ
Ñ
Ñ
250
400
600
250
400
630
400
Ñ
1 V/10 mA
1 V/150 mA
10 V/150 mA
5 V/2 mA
5 V/2 mA
5 V/2 mA
1 V/100 mA
1 V/100 mA
1 V/100 mA
1 V/300 mA
1 V/300 mA
1 V/300 mA
1 V/100 mA
1 V/100 mA
@V
CE
/
I
C
Mfr.Õs
Type
Leaded
DO-35
Ñ
SD103C
BAT85
Ñ
Ñ
BAT42
BAT43
BAT48
SD103B
Ñ
Ñ
SD101C
Ñ
Ñ
Ñ
SD103A
SD101B
BAT86
SD101A
1N5711
Ñ
Ñ
BAT46
SOD-80C
Ñ
LL103C
BAS85
Ñ
Ñ
LL42
LL43
LL48
LL103B
Ñ
Ñ
LL101C
Ñ
Ñ
Ñ
LL103A
LL101B
BAS86
LL101A
LL5711
Ñ
Ñ
LL46
SOD-323
BAT17WS
SD103CWS
BAT54WS
Ñ
Ñ
Ñ
Ñ
Ñ
SD103BWS
SD106WS
SD107WS
SD101CWS
Ñ
Ñ
Ñ
SD103AWS
SD101BWS
Ñ
SD101AWS
Ñ
Ñ
Ñ
Ñ
Surface Mount
SOD-123
BAT17W
SD103CW
BAT54W
Ñ
Ñ
BAT42W
BAT43W
Ñ
SD103BW
Ñ
Ñ
SD101CW
Ñ
Ñ
Ñ
SD103AW
SD101BW
Ñ
SD101AW
Ñ
Ñ
Ñ
BAT46W
SOT-23*
BAT17
Ñ
BAT54
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
BAS40
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
BAS70
Ñ
Ñ
Ñ
SOT-23 
BAT17DS
Ñ
BAT54A¥
BAT54C¥
BAT54S¥
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
BAS40-04
BAS40-05
BAS40-06
Ñ
Ñ
Ñ
Ñ
BAS70-04
BAS70-05
BAS70-06
Ñ
Reverse
Voltage
V
BR
(V)
13
*Leaded.  Surface mount.
Zener
Diodes
*Single.  Dual. ¥Dual SOT-23: A Ñ 06, common anode; C Ñ 05, common cathode; S Ñ 04, series.
Small
Signal
DMOS
Transistors
Mfr.Õs
Type
TO-92*
N-Channel
Ñ
Ñ
2N7000
BS170
P-Channel
Ñ
BS250
Ñ
Ñ
SOT-23 
N-Channel
2N7002
BS870
Ñ
Ñ
P-Channel
Ñ
BS850
Ñ
Ñ
60
60
60
60
250
250
300
300
7.5
5.0
5.0
5.0
10 V/500 mA
10 V/200 mA
10 V/500 mA
10 V/200 mA
V
DSS
(V)
I
D
(mA)
R
DS(ON)
(½)
@V
GS
/
I
D
Mfr.Õs
Type
DO-35
1N5226B
1N5230B
1N5231B
1N5232B
1N5240B
1N5245B
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
DO-41
1N4728A
1N4732A
1N4733A
1N4734A
1N4740A
1N4744A
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
SOT-23
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
MMBZ5226B
MMBZ5230B
MMBZ5232B
MMBZ5235B
MMBZ5236B
MMBZ5237B
MMBZ5239B
MMBZ5240B
MMBZ5242B
MMBZ5248B
MMBZ5250B
MMBZ5254B
MMBZ5257B
SOD-123
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
MMSZ5226B
MMSZ5230B
MMSZ5232B
MMSZ5235B
MMSZ5236B
MMSZ5237B
MMSZ5239B
MMSZ5240B
MMSZ5242B
MMSZ5248B
MMSZ5250B
MMSZ5254B
MMSZ5257B
Pmax
(mW)
500
500
500
500
500
500
300
300
300
300
300
300
300
300
300
300
300
300
300
Zener Voltage
Range
3.3
4.7
5.1
5.6
10.0
15.0
3.3
4.7
5.6
6.8
7.5
8.2
9.1
10.0
12.0
18.0
20.0
27.0
33.0
Zener Voltage
Tolerance
5%
5%
5%
5%
5%
5%
5%
5%
5%
5%
5%
5%
5%
5%
5%
5%
5%
5%
5%
*Leaded.  Surface mount.
812
b
ALLIED
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