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BCP55-16

Description
Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin
CategoryDiscrete semiconductor    The transistor   
File Size154KB,15 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
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BCP55-16 Overview

Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin

BCP55-16 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNexperia
package instructionSC-73, 4 PIN
Reach Compliance Codecompliant
Shell connectionCOLLECTOR
ConfigurationSINGLE
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power consumption environment1.5 W
Certification statusNot Qualified
GuidelineIEC 60134
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
BC637; BCP55; BCX55
60 V, 1 A NPN medium power transistors
Rev. 07 — 25 June 2007
Product data sheet
1. Product profile
1.1 General description
NPN medium power transistor series.
Table 1.
Product overview
Package
NXP
BC637
[2]
BCP55
BCX55
[1]
[2]
Type number
[1]
PNP complement
JEITA
SC-43A
SC-73
SC-62
JEDEC
TO-92
-
TO-243
BC638
BCP52
BCX52
SOT54
SOT223
SOT89
Valid for all available selection groups.
Also available in SOT54A and SOT54 variant packages (see
Section 2).
1.2 Features
I
High current
I
Two current gain selections
I
High power dissipation capability
1.3 Applications
I
I
I
I
Linear voltage regulators
Low-side switches
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
DC current gain
h
FE
selection -10
h
FE
selection -16
single pulse; t
p
1 ms
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
Conditions
open base
Min
-
-
-
63
63
100
Typ
-
-
-
-
-
-
Max
60
1
1.5
250
160
250
Unit
V
A
A

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