MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM7785-60ULA
TECHNICAL DATA
FEATURES
LOW INTERMODULATION DISTORTION
IM3= -30 dBc at Pout= 41.0dBm
Single Carrier Level
HIGH POWER
P1dB=48.0dBm at 7.7GHz to 8.5GHz
HIGH GAIN
G1dB=7.5dB at 7.7GHz to 8.5GHz
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS
Output Power at 1Db Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
SYMBOL
P
1dB
G
1dB
I
DS1
ΔG
( Ta= 25
°
C )
UNIT
dBm
dB
A
dB
%
dBc
A
°
C
MIN.
47.0
6.5
⎯
⎯
⎯
-25
⎯
⎯
TYP. MAX.
48.0
⎯
7.5
14.5
⎯
36
-30
⎯
⎯
⎯
16.0
±0.8
⎯
⎯
13.1
100
CONDITIONS
V
DS
= 10V
f = 7.7 to 8.5GHz
IDSset=9.5A
η
add
IM
3
IDS2
ΔTch
Two-Tone Test
Po=41.0dBm
(Single Carrier Level)
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
Recommended Gate Resistance(Rg) :
28
Ω
(Max.)
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL
gm
V
GSoff
I
DSS
V
GSO
R
th(c-c)
( Ta= 25°C )
UNIT
S
V
A
V
°
C/W
MIN.
⎯
-1.0
⎯
-5.0
⎯
TYP.
15.0
-1.8
27
⎯
0.8
MAX.
⎯
-2.5
⎯
⎯
1.0
CONDITIONS
V
DS
= 3V
I
DS
= 11.0 A
V
DS
=
3V
I
DS
= 120 mA
V
DS
=
3V
V
GS
= 0V
I
GS
= -0.4mA
Channel to Case
The information contained herein is presented only as a guide for th e applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
September 2011
TIM7785-60ULA
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25
°
C)
Channel Temperature
Storage Temperature
( Ta= 25
°
C )
SYMBOL
V
DS
V
GS
I
DS
P
T
T
ch
T
stg
UNIT
V
V
A
W
°
C
°
C
RATING
15
-5
20
150
175
-65 to +175
PACKAGE OUTLINE (7-AA09A)
Unit in mm
Gate
Source
Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2
京公网安备 11010802033920号
EEWORLD
