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BCX53-10E6327

Description
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size517KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
Download Datasheet Parametric Compare View All

BCX53-10E6327 Overview

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon

BCX53-10E6327 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PSSO-F3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)63
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)125 MHz
BCX51...-BCX53...
PNP Silicon AF Transistors
For AF driver and output stages
2
3
1
2
High collector current
Low collector-emitter saturation voltage
Complementary types: BCX54...BCX56 (NPN)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
Type
BCX51
BCX51-16
BCX52
BCX52-16
BCX53
BCX53-10
BCX53-16
Marking
AA
AD
AE
AM
AH
AK
AL
1=B
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=C
2=C
2=C
2=C
2=C
2=C
2=C
3=E
3=E
3=E
3=E
3=E
3=E
3=E
Package
SOT89
SOT89
SOT89
SOT89
SOT89
SOT89
SOT89
1
2011-07-29

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Description Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon,
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Maker Infineon Infineon Infineon Infineon Infineon Infineon Infineon
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Collector-emitter maximum voltage 80 V 60 V 60 V 45 V 45 V 80 V 80 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 63 40 100 100 40 100 40
JESD-30 code R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3
JESD-609 code e3 e3 e3 e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1 1 1 1
Number of components 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260 260
Polarity/channel type PNP PNP PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 1 W 1 W 1 W 1 W 1 W 1 W 1 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES YES
Terminal surface MATTE TIN MATTE TIN MATTE TIN Matte Tin (Sn) Matte Tin (Sn) MATTE TIN Matte Tin (Sn)
Terminal form FLAT FLAT FLAT FLAT FLAT FLAT FLAT
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 40 40 40 40 40 40 40
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 125 MHz 125 MHz 125 MHz 125 MHz 125 MHz 125 MHz 125 MHz
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 - SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 -
Factory Lead Time - 1 week - 1 week 1 week - 1 week
Base Number Matches - 1 1 1 1 1 -
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