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BCX54 ...- BCX56...
NPN Silicon AF Transistors
•
For AF driver and output stages
•
High collector current
•
Low collctor-emitter saturation voltage
•
Complementary types: BCX51...BCX53 (PNP)
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
3
1
2
2
Type
BCX54-16
BCX55
BCX55-16
BCX56
BCX56-10
BCX56-16
1
Pb-containing
Marking
BD
BE
BM
BH
BK
BL
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=C
2=C
2=C
2=C
2=C
2=C
3=E
3=E
3=E
3=E
3=E
3=E
Package
SOT89
SOT89
SOT89
SOT89
SOT89
SOT89
package may be available upon special request
1
2008-10-10
BCX54 ...- BCX56...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V
(BR)CEO
V
I
C
= 10 mA,
I
B
= 0 , BCX54
I
C
= 10 mA,
I
B
= 0 , BCX55
I
C
= 10 mA,
I
B
= 0 , BCX56
45
60
80
V
(BR)CBO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
µA
Collector-base breakdown voltage
I
C
= 100 µA,
I
E
= 0 , BCX54
I
C
= 100 µA,
I
E
= 0 , BCX55
I
C
= 100 µA,
I
E
= 0 , BCX56
45
60
100
V
(BR)EBO
I
CBO
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
5
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 °C
-
-
h
FE
-
-
-
-
100
160
-
-
-
0.1
20
-
-
250
160
250
-
0.5
1
V
DC current gain
1)
I
C
= 5 mA,
V
CE
= 2 V
I
C
= 150 mA,
V
CE
= 2 V, BCX55/BCX56
I
C
= 150 mA,
V
CE
= 2 V, BCX55-10/BCX56-10
I
C
= 150 mA,
V
CE
= 2 V, BCX54-16...BCX56-16
I
C
= 500 mA,
V
CE
= 2 V
25
40
63
100
25
V
CEsat
V
BE(ON)
Collector-emitter saturation voltage
1)
I
C
= 500 mA,
I
B
= 50 mA
-
-
Base-emitter voltage-
I
C
= 500 mA,
V
CE
= 2 V
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 10 V,
f
= 20 MHz
1
Pulse
f
T
-
100
-
MHz
test: t < 300µs; D < 2%
3
2008-10-10