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MURF1620CT

Description
Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size184KB,3 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
Download Datasheet Parametric View All

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MURF1620CT Overview

Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN

MURF1620CT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
package instructionITO-220AB, 3 PIN
Reach Compliance Codecompliant
Other featuresLOW LEAKAGE CURRENT
applicationULTRA FAST RECOVERY
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.5 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current125 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage200 V
Maximum reverse current10 µA
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
MURF1620CT
Technical Data
Data Sheet N0352, Rev. A
MURF1620CT ULTRAFAST RECTIFIER
Features
Ultra-Fast Switching
High Current Capability
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability Classification 94V-O
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
ITO-220AB
Circuit Diagram
Applications
Switching Power Supply
Power Switching Circuits
General Purpose
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak One Cycle Non-Repetitive Surge
Current(Per Leg)
Symbol
V
RRM
V
RWM
V
R
I
F (AV)
I
FSM
Condition
-
50% duty cycle @T
A
=55°C,
rectangular wave form
8.3ms, Half Sine pulse
Max.
200
8(Per Leg)
16(Per Device)
125
Units
V
A
A
Electrical Characteristics:
Characteristics
Forward Voltage Drop(Per Leg)*
Reverse Current(Per Leg)*
Reverse Recovery Time(Per Leg)
Typical Junction Capacitance(Per Leg)
RSM Isolation Voltage
(t=1.0 second,R.H.<
=30%,
T
A
=25C)
Symbol
V
F1
I
R1
I
R2
t
rr
C
J
Condition
@ 8A, Pulse, T
J
= 25C
@V
R
= rated V
R,
T
J
= 25C
@V
R
= rated V
R,
T
J
= 125C
@I
F
=500mA, I
R
=1A,and I
rm
=250mA
@V
R
= 5V, T
C
= 25℃, f
SIG
= 1MHz
Clip mouting, the epoxy body away
from the heatsink edge by more
than 0.110”along the lead direction.
Clip mouting, the epoxy body is
inside the heatsink
Screw mounting, the epoxy body is
inside the heatsink
Typ.
-
-
-
-
-
-
-
-
Max.
1.5
10
500
35
80
4500
3500
1500
Units
V
μA
μA
ns
pF
V
iso
V
* Pulse width < 300 µs, duty cycle < 2%
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