DPS32M8ANS-55M datasheet, PDF - EEWORLD Datasheet

DPS32M8ANS-55M: DescriptionStandard SRAM, 32KX8, 55ns, CMOS, CDIP28, SIDE BRAZED, DIP-28; Categorystorage storage; File Size199KB，6 Pages; ManufacturerTwilight Technology Inc.

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DPS32M8ANS-55M Overview

Standard SRAM, 32KX8, 55ns, CMOS, CDIP28, SIDE BRAZED, DIP-28

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Twilight Technology Inc.
Parts packaging code	DIP
package instruction	DIP, DIP28,.6
Contacts	28
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	55 ns
I/O type	COMMON
JESD-30 code	R-CDIP-T28
length	35.56 mm
memory density	262144 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	32KX8
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum seat height	4.191 mm
Maximum standby current	0.02 A
Minimum standby current	4.5 V
Maximum slew rate	0.16 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	15.24 mm

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