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B2S

Description
0.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size190KB,2 Pages
ManufacturerCHENG-YI ELECTRONIC CO., LTD.
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B2S Overview

0.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

B1S thru B10S
SURFACE MOUNT
GLASS PASSIVATED
BRIDGE RECTIFIERS
CHENG- YI
ELECTRONIC
REVERSE VOLTAGE -100 to 1000 Volts
FORWARD CURRENT -0.8 Amperes
FEATURES
Rating to 1000V PRV
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead in plated copper
MECHANICAL DATA
Polarity: Symbol molded on body
Weight: 0.0044 ounces, 0.125 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
0
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
B1S
B2S
200
140
200
B4S
400
280
400
0.8
B6S
600
420
600
B8S
800
560
800
B10S
1000
700
1000
UNITS
V
V
V
A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current (Note 1) @
TA=40
0
V
RRM
V
RMS
V
DC
100
70
100
C
V
(AV)
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC Method)
Maximum Forward Voltage at 0.4A DC
Maximum DC Reverse Current
@ TJ=25 C
at rated DC Blocking Voltage
@ TJ=125 C
0
0
I
FSM
V
F
I
R
C
J
R
JA
30
A
1.0
5
500
15
75
-55 to +150
-55 to +150
0
V
A
Typical Junction Capacitance per element (Note2)
Typical Thermal Resistance (Note3)
Operating Temperature Range
Storage Temperature Range
pF
C/W
0
T
J
T
STG
C
C
0
NOTES: 1.Mounted on P Board.
.C.
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Ambient.

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B2S B10S B1S
Description 0.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 0.8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
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