HF72D120ACE
Features
GEN3 Hexfred Technology
Low V
F
Low I
RR
Low t
RR
Soft Reverse Recovery
Benchmark Efficiency for Motor Control Applications
Rugged Transient Performance
Low EMI
Excellent Current Sharing in Parallel Operation
PD - 93879
Hexfred Die in Wafer Form
1200V
I
F(nom)
=100A
V
F(typ)
= 1.82V @ I
F(nom)
@ 25°C
Motor Control Antiparallel Diode
125mm Wafer
Benefits
Electrical Characteristics (Wafer Form)
Parameter
V
F
BV
R
I
RM
Description
Forward Voltage Drop
Reverse Breakdown Voltage
Reverse Leakage Current
Guaranteed (min, max)
0.98 V min,1.25 V max
1200V min
40µA max
Test Conditions
I
F
= 10A, T
J
= 25°C
T
J
= 25°C, I
R
= 500µA
T
J
= 25°C, V
R
= 1200V
Mechanical Data
Nominal Backmetal Composition, (Thickness)
Nominal Front Metal Composition, (Thickness)
Dimensions
Wafer Diameter
Wafer Thickness, Tolerance
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment
Recommended Die Attach Conditions
Cr- Ni - Ag, (1kA - 4kA - 6kA)
99% Al/1% Si, (3µm)
0.356" x 0.356"
125mm, with std. < 100 > flat
310µm, +/-15µm
01-5319
100µm
0.25mm diameter minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300°C
Die Outline
9.05
[.356]
NOT ES :
1. ALL DIMENSIONS ARE S HOWN IN MILLIMET ERS [INCHES ].
2. CONT ROLLING DIMENSION: [INCH].
3. DIMENS IONAL T OLERANCES :
7.63
[.301]
ANODE
9.05
[.356]
BONDING PADS:
WIDT H
&
LENGT H
OVERALL DIE:
< 0.635 T OLERANCE = + /- 0.013
< [.0250] T OLERANCE = + /- [.0005]
> 0.635 T OLERANCE = + /- 0.025
> [.0250] T OLERANCE = + /- [.0010]
< 1.270 T OLERANCE = + /- 0.102
< [.050] T OLERANCE = + /- [.004]
> 1.270 T OLERANCE = + /- 0.203
> [.050] T OLERANCE = + /- [.008]
7.62
[.300]
01-5319
WIDT H
&
LENGT H
www.irf.com
Page 1
4/7/2000
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