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31DF4

Description
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 400V V(RRM), Silicon, DO-27,
CategoryDiscrete semiconductor    diode   
File Size51KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
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31DF4 Overview

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 400V V(RRM), Silicon, DO-27,

31DF4 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
package instructionO-PALF-W2
Reach Compliance Codeunknown
applicationSUPER FAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.25 V
JEDEC-95 codeDO-27
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current125 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage400 V
Maximum reverse current5 µA
Maximum reverse recovery time0.03 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
BL
FEATURES
Low cost
Low leakage
GALAXY ELECTRICAL
31DF3 --- 31DF4
VOLTAGE RANGE: 300 --- 400 V
CURRENT: 1.5 A
SUPER FAST RECTIFIERS
DO - 27
Diffused junction
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol and
sim ilar solvents
MECHANICAL DATA
Case:JEDEC DO--27,m olded plastic
Terminals: Axial lead ,solderable per
MIL-STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041ounces,1.15 gram s
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unless otherwise specified.
Single phase,half wave,50Hz,resistive or inductive load. For capacitive load,derate by 20%.
31DF3
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
31DF4
400
280
400
1.5
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
300
210
300
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
125.0
A
Maximum instantaneous forw ard voltage
@ I
F
=3A
Maximum reverse current
at rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
(Note3)
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.25
5.0
50.0
30
90
34
- 55 ----- + 150
- 55 ----- + 150
V
A
ns
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0264017
BL
GALAXY ELECTRICAL
1.

31DF4 Related Products

31DF4 31DF3
Description Rectifier Diode, 1 Phase, 1 Element, 1.5A, 400V V(RRM), Silicon, DO-27, Rectifier Diode, 1 Phase, 1 Element, 1.5A, 300V V(RRM), Silicon, DO-27,
Is it Rohs certified? conform to conform to
Maker Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd.
package instruction O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknow
application SUPER FAST RECOVERY SUPER FAST RECOVERY
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.25 V 1.25 V
JEDEC-95 code DO-27 DO-27
JESD-30 code O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 125 A 125 A
Number of components 1 1
Phase 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C
Maximum output current 1.5 A 1.5 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 400 V 300 V
Maximum reverse current 5 µA 5 µA
Maximum reverse recovery time 0.03 µs 0.03 µs
surface mount NO NO
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL
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