DHG 20 I 1200 PA
preliminary
Sonic Fast Recovery Diode
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
V
RRM
=
I
FAV
=
t
rr
=
1200 V
20 A
200 ns
DHG 20 I 1200 PA
3
1
Backside: cathode
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very short recovery time
●
Improved thermal behaviour
●
Very low Irm-values
●
Very soft recovery behaviour
●
Avalanche voltage rated for reliable
operation
●
Soft reverse recovery for low EMI/RFI
●
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode
●
Rectifiers in switch mode power
supplies (SMPS)
●
Uninterruptible power supplies (UPS)
Package:
●
Housing: TO-220
●rIndustry
standard outline
●rEpoxy
meets UL 94V-0
●rRoHS
compliant
Ratings
Symbol
V
RRM
I
R
V
F
Definition
max. repetitive reverse voltage
reverse current
Conditions
V
R
= 1200 V
V
R
= 1200 V
I
F
=
I
F
=
I
F
=
I
F
=
20 A
40 A
20 A
40 A
d = 0.5
T
C
= 95°C
T
VJ
= 150°C
T
VJ
= 125 °C
T
VJ
= 25 °C
T
VJ
= 25 °C
T
VJ
= 125 °C
T
VJ
= 25 °C
min.
typ.
max.
1200
30
0.4
2.24
2.90
2.25
3.17
20
1.25
45
0.90
Unit
V
µA
mA
V
V
V
V
A
V
mΩ
K/W
°C
W
A
A
A
ns
ns
pF
forward voltage
I
FAV
V
F0
r
F
R
thJC
T
VJ
P
tot
I
FSM
I
RM
t
rr
C
J
average forward current
threshold voltage
slope resistance
rectangular
for power loss calculation only
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
-55
T
C
= 25 °C
t = 10 ms (50 Hz), sine
I
F
=
20 A; V
R
= 600 V
T
VJ
= 45°C
T
VJ
= 25 °C
T
VJ
= 125°C
T
VJ
= 25 °C
T
VJ
= 125°C
T
VJ
= 25 °C
-di
F
/dt = 400 A/µs
V
R
= 600 V; f = 1 MHz
15
20
200
350
8
150
140
150
reverse recovery time
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per diode unless otherwise specified
20110616a
© 2011 IXYS all rights reserved
DHG 20 I 1200 PA
preliminary
Ratings
Symbol
I
RMS
R
thCH
T
stg
Weight
M
D
F
C
mounting torque
mounting force with clip
Definition
RMS current
thermal resistance case to heatsink
storage temperature
Conditions
per terminal
min.
typ.
0.50
max.
35
Unit
A
K/W
°C
g
Nm
N
-55
2
0.4
20
150
0.6
60
Product Marking
Part number
D
H
G
20
I
1200
PA
=
=
=
=
=
=
=
Diode
Sonic Fast Recovery Diode
extreme fast
Current Rating [A]
Single Diode
Reverse Voltage [V]
TO-220AC (2)
Marking on product
Logo
DateCode
Assembly Code
Assembly Line
abcdef
YYWW Z
XXXXXX
Ordering
Standard
Ordering Number
DHG 20 I 1200 PA
Marking on Product
DHG20I1200PA
Delivery Mode
Tube
Quantity
50
Code No.
504934
Similar Part
DHG20I1200HA
Package
TO-247AD (2)
Voltage Class
1200
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per diode unless otherwise specified
20110616a
© 2011 IXYS all rights reserved
DHG 20 I 1200 PA
preliminary
Outlines TO-220
Dim.
A
A1
A
A1
A2
b
b2
C
D
E
e
H1
L
L1
C
A2
ØP
Q
Millimeter
Min.
Max.
4.32
1.14
2.29
0.64
1.15
0.35
14.73
9.91
5.08
5.85
12.70
2.79
3.54
2.54
4.82
1.39
2.79
1.01
1.65
0.56
16.00
10.66
BSC
6.85
13.97
5.84
4.08
3.18
Inches
Min.
Max.
0.170
0.045
0.090
0.025
0.045
0.014
0.580
0.390
0.200
0.230
0.500
0.110
0.139
0.100
0.190
0.055
0.110
0.040
0.065
0.022
0.630
0.420
BSC
0.270
0.550
0.230
0.161
0.125
Q
E
ØP
4
1
3
2x b2
L1
2x b
e
IXYS reserves the right to change limits, conditions and dimensions.
L
D
H1
Data according to IEC 60747and per diode unless otherwise specified
20110616a
© 2011 IXYS all rights reserved
DHG 20 I 1200 PA
preliminary
40
5
T
VJ
= 125°C
V
R
= 600 V
30
4
40 A
I
F
20
Q
rr
3
20 A
[A]
10
T
VJ
= 125°C
T
VJ
= 25°C
[µC]
2
10 A
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
1
200
300
400
500
600
700
V
F
[V]
Fig. 1 Typ. Forward current versus V
F
35
30
25
T
VJ
= 125°C
V
R
= 600 V
20 A
10 A
40 A
di
F
/dt
[A/µs]
Fig. 2 Typ. reverse recov.charge Q
rr
vs. di/dt
700
600
500
T
VJ
= 125°C
V
R
= 600 V
I
RM
[A]
20
15
10
5
0
200
t
rr
400
40 A
20 A
10 A
[ns]
300
200
100
0
200
300
400
500
600
700
300
400
500
600
700
di
F
/dt
[A/µs]
Fig. 3 Typ. peak reverse current I
RM
vs. di/dt
1.4
T
VJ
= 125°C
1.2
V
R
= 600 V
1
di
F
/dt
[A/µs]
Fig. 4 Typ. recovery time t
rr
versus di/dt
1.0
40 A
E
rec
0.8
Z
thJC
20 A
[mJ]
0.6
[K/W]
10 A
0.4
1
2
3
4
700
0.1
0.001
0.01
0.1
R
i
0.231
0.212
0.19
0.267
1
t
i
0.0005
0.004
0.02
0.15
10
0.2
200
300
400
500
600
di
F
/dt
[A/µs]
Fig. 5 Typ. recovery energy E
rec
versus di/dt
t
p
[s]
Fig. 6 Typ. transient thermal impedance
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per diode unless otherwise specified
20110616a
© 2011 IXYS all rights reserved
Power technology
京公网安备 11010802033920号
EEWORLD
