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D690S20T

Description
Rectifier Diode, 1 Phase, 1 Element, 1020A, 2000V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size165KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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D690S20T Overview

Rectifier Diode, 1 Phase, 1 Element, 1020A, 2000V V(RRM), Silicon,

D690S20T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2.7 V
JESD-30 codeO-CEDB-N2
Humidity sensitivity level1
Maximum non-repetitive peak forward current27500 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current690 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage2000 V
Maximum reverse recovery time9 µs
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
S
Schnelle Diode
Fast Diode
Datenblatt / Data sheet
D690S
T
vj
= -25°C... T
vj max
V
RRM
I
FRMSM
T
C
= 100 °C
T
C
= 55 °C,
θ
= 180°sin, t
P
= 10 ms
I
FAVM
I
FAVM
I
FRMS
T
vj
= 25°C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25°C, t
P
= 1 ms
T
vj
= T
vj max
, t
P
= 1 ms
T
vj
= 25°C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25°C, t
P
= 1 ms
T
vj
= T
vj max
, t
P
= 1 ms
I
FSM
2000
2200
2400 V
2600 V
1600 A
690 A
870 A
1360 A
14000
11500
33400
27500
980
661
558
378
A
A
A
A
10 A²s
3
10 A²s
3
10 A²s
3
10 A²s
3
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Kenndaten
Periodische Spitzensperrspannung
repetitive peak reverse voltages
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Dauergrenzstrom
average on-state current
Durchlaßstrom-Effektivwert
RMS on-state current
Stoßstrom-Grenzwert
surge current
Elektrische Eigenschaften
Grenzlastintegral
I²t-value
I²t
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie
200 A
i
F
3000 A
on-state characteristic
T
vj
= T
vj max
, i
F
= 3000A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
v
F
V
(TO)
r
T
A=
B=
C=
D=
V
FRM
t
fr
max.
2,7 V
1,0 V
0,5 mΩ
v
F
=
A
+
B
i
F
+
C
ln ( i
F
+
1 )
+
D
Spitzenwert der Durchlaßverzögerungsspannung
peak value of forward recovery voltage
Durchlaßverzögerungszeit
forward recovery time
Sperrstrom
reverse current
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Sperrverzögerungszeit
reverse recovery time
i
F
DIN IEC 747-2
T
vj
= T
vj max
, di
F
/dt = 50A/µs, v
R
= 0V
DIN IEC 747-2, Methode / Method II
T
vj
= T
vj max,
i
FM
= 3000A
di
F
/dt = 50A/µs, v
R
= 0V
T
vj
= 25°C , v
R
= v
RRM
T
vj
= T
vj max
, v
R
= V
RRM
DIN IEC 747-2, T
vj
= T
vj max
i
FM
= 1020A, -di
F
/dt = 50A/µs
v
R
0,5V
RRM
, v
RM
= 0,8V
RRM
DIN IEC 747-2, T
vj
= T
vj max
i
FM
= 1020A, -di
F
/dt = 50A/µs
v
R
0,5V
RRM
, v
RM
= 0,8V
RRM
DIN IEC 747-2, T
vj
= T
vj max
i
FM
= 1020A, -di
F
/dt = 50/µs
v
R
0,5V
RRM
, v
RM
= 0,8V
RRM
-1,575E-01
6,000E-04
2,421E-01
-1,582E-02
typ.
typ.
16,5 V
6,2 µs
i
R
max.
max.
25 mA
250 mA
155 A
I
RM
Q
r
970 µAs
t
rr
9 µs
prepared by: H.Sandmann
approved by: M.Leifeld
date of publication:
revision:
2008-09-15
3.0
IFBIP D AEC / 2008-09-15, H.Sandmann
Seite / page A 14/92
A 48/08
Seite/page
1/6

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Description Rectifier Diode, 1 Phase, 1 Element, 1020A, 2000V V(RRM), Silicon, DIODE GEN PURP 2.6KV 690A DIODE GEN PURP 2KV 690A DIODE GEN PURP 2.4KV 690A DIODE GEN PURP 2.2KV 690A Rectifier Diode, 1 Phase, 1 Element, 690A, 2600V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 1020A, 2400V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 1020A, 2200V V(RRM), Silicon,
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to
Maker Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant
application GENERAL PURPOSE FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY GENERAL PURPOSE - GENERAL PURPOSE
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE - SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON - SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE
Maximum forward voltage (VF) 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V - 2.7 V
JESD-30 code O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 - O-CEDB-N2
Maximum non-repetitive peak forward current 27500 A 11500 A 11500 A 11500 A 11500 A 27500 A - 27500 A
Number of components 1 1 1 1 1 1 - 1
Phase 1 1 1 1 1 1 - 1
Number of terminals 2 2 2 2 2 2 - 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C - 150 °C
Maximum output current 690 A 690 A 690 A 690 A 690 A 690 A - 690 A
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED - CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND ROUND ROUND ROUND ROUND - ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON - DISK BUTTON
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
Maximum repetitive peak reverse voltage 2000 V 2600 V 2000 V 2400 V 2200 V 2600 V - 2200 V
Maximum reverse recovery time 9 µs 9 µs 9 µs 9 µs 9 µs 9 µs - 9 µs
surface mount YES YES YES YES YES YES - YES
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD - NO LEAD
Terminal location END END END END END END - END
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
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