DF005M thru DF10M
Vishay General Semiconductor
Miniature Glass Passivated Single-Phase Bridge Rectifiers
FEATURES
• UL recognition, file number E54214
• Ideal for printed circuit boards
• Applicable for automative insertion
~
~
• High surge current capability
~
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for SMPS, lighting ballaster, adapter,
battery charger, home appliances, office equipment,
and telecommunication applications.
1A
50 V to 1000 V
50 A
5 µA
1.1 V
150 °C
~
Case Style DFM
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
J
max.
MECHANICAL DATA
Case:
DFM
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity:
As marked on body
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output rectified
current at T
A
= 40 °C
Peak forward surge current single
sine-wave superimposed on rated load
Rating for fusing (t < 8.3 ms)
Operating junction and storage
temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
T
J
, T
STG
SYMBOL
DF005M
DF005
50
35
50
DF01M
DF01
100
70
100
DF02M
DF02
200
140
200
DF04M
DF04
400
280
400
1.0
50
10
- 55 to + 150
DF06M
DF06
600
420
600
DF08M
DF08
800
560
800
DF10M
DF10
1000
700
1000
V
V
V
A
A
A
2
s
°C
UNIT
Document Number: 88571
Revision: 14-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
DF005M thru DF10M
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum
instantaneous forward
voltage drop per diode
Maximum
reverse current at
rated DC blocking
voltage per diode
Typical junction
capacitance per diode
TEST CONDITIONS
1.0 A
SYMBOL
V
F
DF005M
DF01M
DF02M
DF04M
1.1
DF06M
DF08M
DF10M
UNIT
V
T
A
= 25 °C
T
A
= 125 °C
I
R
5.0
500
µA
4.0 V, 1 MHz
C
J
25
pF
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
(1)
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13 x 13 mm) copper pads
SYMBOL
R
θJA
R
θJL
DF005M
DF01M
DF02M
DF04M
40
15
DF06M
DF08M
DF10M
UNIT
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
DF06M-E3/45
UNIT WEIGHT (g)
0.416
PREFERRED PACKAGE CODE
45
BASE QUANTITY
50
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
1.0
60
60 Hz
Resistive or
Inductive Load
Average Forward Output Current (A)
Average Forward Output Current (A)
50
T
J
= 150 °C
Single Sine-Wave
40
0.5
30
20
P.C.B. Mounted on
0.51 x 0.51" (13 x 13 mm)
Copper Pads
with
0.06"
(1.5 mm) Lead Length
0
20
40
60
80
100
120
140 150
10
1.0 Cycle
0
1
10
100
Ambient Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Derating Curve Output Rectified Current
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
www.vishay.com
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88571
Revision: 14-Jan-08
DF005M thru DF10M
Vishay General Semiconductor
10
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Instantaneous Forward Current (A)
1
Junction Capacitance (pF)
10
0.1
T
J
= 25 °C
Pulse
Width
= 300
µs
1 % Duty Cycle
0.01
0.4
1
0.6
0.8
1.0
1.2
1.4
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
100
100
10
T
J
= 125 °C
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (µA)
10
1
1
0.1
T
J
= 25 °C
0.01
0
20
40
60
80
100
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
t - Heating Time (s)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Case Style DFM
0.255 (6.5) 0.315 (8.00)
0.245 (6.2) 0.285 (7.24)
0.335 (8.51)
0.320 (8.12)
0.130 (3.30)
0.120 (3.05)
0.045 (1.14)
0.035 (0.89)
0.023 (0.58)
0.018 (0.46)
0.205 (5.2)
0.195 (5.0)
0.080 (2.03)
0.050 (1.27)
0.185 (4.69)
0.150 (3.81)
0.013 (0.33)
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
0.075 (1.90)
0.055 (1.39)
Document Number: 88571
Revision: 14-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
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