MPSA18RLRP datasheet, PDF - EEWORLD Datasheet

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MPSA18RLRP: Description200mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92; CategoryDiscrete semiconductor The transistor; File Size150KB，4 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MPSA18RLRP Overview

200mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

MPSA18RLRP Parametric

Parameter Name	Attribute value
Maker	Motorola ( NXP )
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
Other features	LOW NOISE
Maximum collector current (IC)	0.2 A
Collector-based maximum capacity	3 pF
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	500
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power consumption environment	1.5 W
Maximum power dissipation(Abs)	0.625 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	160 MHz
VCEsat-Max	0.3 V

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	MPSA18RLRP	MPSA18RLRM	MPSA18RLRF	MPSA18RL1	MPSA18ZL1	MPSA18RL	MPSA18RLRB	MPSA18RLRE
Description	200mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	200mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Maker	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE, EUROPEAN PART NUMBER	LOW NOISE, EUROPEAN PART NUMBER	LOW NOISE, EUROPEAN PART NUMBER	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A
Collector-based maximum capacity	3 pF	3 pF	3 pF	3 pF	3 pF	3 pF	3 pF	3 pF
Collector-emitter maximum voltage	45 V	45 V	45 V	45 V	45 V	45 V	45 V	45 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	500	500	500	500	500	500	500	500
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power consumption environment	1.5 W	1.5 W	1.5 W	1.5 W	1.5 W	1.5 W	1.5 W	1.5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	WIRE	WIRE	WIRE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	160 MHz	160 MHz	160 MHz	160 MHz	160 MHz	160 MHz	160 MHz	160 MHz
VCEsat-Max	0.3 V	0.3 V	0.3 V	0.3 V	0.3 V	0.3 V	0.3 V	0.3 V
ECCN code	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99

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