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GPP60B

Description
6 A, 100 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size110KB,2 Pages
ManufacturerCHENG-YI ELECTRONIC CO., LTD.
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GPP60B Overview

6 A, 100 V, SILICON, RECTIFIER DIODE

GPP60 SERIES
GLASS PASSIVATED RECTIFIER
CHENG- YI
ELECTRONIC
VOLTAGE RANGE 50 TO 1000 Volts
CURRENT 6.0 Amperes
P600
FEATURE
Glass passivated junction
Low forward voltage
High current capability
Low leakage current
High surge capability
Low cost
MECHANICAL DATA
Case:Mold plastic use UL 94V-0 recognized
flame retardant epoxy
Terminals:Axial leads, solderable per
MIL-STD-202, method 208
Polarity:Color band denotes cathode
Mounting Position:Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
0
C ambient temperature unless otherwise specified.
Signle phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
GPP60A GPP60B GPP60D GPP60G GPP60J GPP60K GPP60M
UNITS
V
V
V
A
A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current,
.375", (9.5mm) Lead Length at
TA =55 C
0
50
35
50
100
70
100
200
140
200
400
280
400
6.0
250
600
420
600
800
560
800
1000
700
1000
Peak Forward Surge Current 8.3 ms single half sine-wave
Maximum Forward Voltage at 6.0A Peak
Maximum Reverse Current, Rated DC Blocking Voltage
Maximum DC Reverse Current, Full Cycle Average,
.375", (9.5mm) Lead Length at
TA =55 C
0
1.0
10
100
60
1.5
-65 to +175
1.1
V
A
A
pF
S
0
Typical Junction Capacitance (Note 1)
Typical Reverse Recovery Time (Note 2)
Operating and Storage Temperature Range T A
Notes : 1. Measured at 1.0MHz and applied reverse voltage of 4.0 V
DC
2. Measured with I
F
=.5A, I
R
=1A, Irr=.25A
C

GPP60B Related Products

GPP60B GPP60 GPP60G GPP60D GPP60K GPP60A GPP60J GPP60M
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