Reflective Photosensors (Photo Reflectors)
CNB1009
(ON2173)
Reflective photosensor
Non-contact point SW, object sensing
4.0
±0.2
Unit: mm
12.0
±0.3
(4.0)
LED
■
Overview
CNB1009 is a photosensor detecting the change of reflective light
in which a high efficiency GaAs infrared light emitting diode is used
as the light emitting element, and a high sensitivity Si phototransistor
is used as the light detecting element. The two elements are located
parallel in the same direction and objects are detected when passing
in front of the device.
•
Fast response: t
r
, t
f
=
6
µs
(typ.)
•
Small size, light weight
•
Detection of paper, film and cloth
•
Optical mark reading
•
Detection of coin and bill
•
Detection of position and edge
•
Start, end mark detection of magnetic tape
9.5
±0.3
6.5
±0.3
2-φ2.3
±0.2
T.R
1.0
(1.0)
1.0
7.4
±0.2
19.0
±0.3
1.0
2-9.5
±0.2
φ2.2
±0.2
■
Features
2.5 min.
■
Applications
(15.5)
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Input (Light
Reverse voltage
Power dissipation
*1
Symbol
V
R
I
F
P
D
V
CEO
V
ECO
I
C
*2
Rating
3
50
75
20
5
30
100
−25
to
+85
−30
to
+100
Unit
V
mA
mW
V
V
mA
mW
°C
°C
1: Anode
2: Cathode
3: Collector
2
3
4: Emitter
PRSTR104-003 Package
(Note) ( ) Dimension is reference
emitting diode) Forward current
Output (Photo Collector-emitter voltage
transistor)
(Base open)
Emitter-collector voltage
(Base open)
Collector current
Collector power dissipation
Temperature
Storage temperature
Operating ambient temperature
P
C
T
opr
T
stg
Note) *1: Input power derating ratio is
1.0 mW/°C at T
a
≥
25°C.
*2: Output power derating ratio is
1.33 mW/°C at T
a
≥
25°C.
■
Electrical-Optical Characteristics
T
a
=
25°C
±
3°C
Parameter
Input
Forward voltage
Terminal capacitance
Output
Collector-emitter cutoff current
characteristics (Base open)
Collector-emitter capacitance
Transfer
Collector current
Rise time
Fall time
*1, 2
Symbol
V
F
I
R
C
t
I
CEO
C
C
I
C
t
r
t
f
I
F
Conditions
I
F
=
50 mA
V
R
=
3 V
V
R
=
0 V, f
=
1 MHz
V
CE
=
10 V
V
CE
=
10 V, f
=
1 MHz
V
CC
=
10 V, I
F
=
20 mA, R
L
=
100
Ω,
d
=
5 mm
I
F
=
50 mA, I
C
=
0.1 mA
V
CC
=
10 V, I
C
=
1 mA, R
L
=
100
Ω
(2.54)
1
4
Min
Typ
1.2
50
Max
1.5
10
200
Unit
V
µA
pF
nA
pF
µA
characteristics Reverse current
5
100
500
0.3
6.0
6.0
I
C
V
CC
d
=
5 mm
R
L
Standard white paper
(Reflective ratio 90%)
characteristics Collector-emitter saturation voltage V
CE(sat)
V
µs
µs
Note) 1. Input and output are handled electrically.
2. This product is not designed to withstand radiation
3. *1: Output current measurement circuit
(Ambient light is shut off completely)
*2: Rank classification
Rank
I
C
(µA)
Q
100 to 500
R
350 to 750
S
600
≤
No-rank
100
≤
Note) The part number in the parenthesis
shows conventional part number.
Publication date: April 2004
SHG00045BED
1
Caution for Safety
■
This product contains Gallium Arsenide (GaAs).
DANGER
GaAs powder and vapor are hazardous to human health if inhaled or
ingested. Do not burn, destroy, cut, cleave off, or chemically dis-
solve the product. Follow related laws and ordinances for disposal.
The product should be excluded form general industrial waste or
household garbage.
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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