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P4KE350C

Description
400 W, BIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size123KB,2 Pages
ManufacturerCHENG-YI ELECTRONIC CO., LTD.
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P4KE350C Overview

400 W, BIDIRECTIONAL, SILICON, TVS DIODE

P4KE SERIES
GLASS PASSIVATED JUNCTION TRAN-
SIENT VOLTAGE SUPPRESSOR
CHENG- YI
ELECTRONIC
VOLTAGE 6.8 to 144 VOLTS
400 WATT PEAK POWER
1.0 WATTS STEADY STATE
DO-15
FEATURES
Plastic package has Underwrites Laboratory
Flammability Classification 94V-O
Glass passivated chip junction in DO-15 package
400W surge capability at 1 ms
Excellent clamping capability
Low zener impedance
Fast response time: typically less than 1.0 ps
from 0 volts to BV min.
Typical I
R
less than 1 A above 10V
High tempreature soldering guaranteed:
300
0
C/10 seconds /.375",(9.5mm)
lead length/51bs.,(2.3kg) tension
MECHANICAL DATA
Case:JEDEC DO-15 Molded plastic
Terminals:Plated Axial leads, solderable per MIL-STD-202, Method 208
Polarity:Color band denotes cathode except Bipolar
Mounting Position:Any
Weight:0.015 ounce, 0.4 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
0
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATINGS
Peak Pulse Power Dissipation at T
A
=25
0
C, T
P
=1ms
(NOTE 1)
Steady Power Dissipation at T
L
=75
0
C
Lead Lengths .375",(9.5mm)
(NOTE 2)
Peak Forward Surge Current 8.3ms Single Half Sine-Wave
Superimposed on Rated Load(JEDEC Method)
(NOTE 3)
Operating Junction and Storage Temperature Range
SYMBOL
P
PK
P
D
VALUE
Minimum 4000
1.0
UNITS
Watts
Watts
Amps
0
I
FSM
T
J
, T
STG
40.0
-65 to + 175
C
Notes: 1. Non-repetitive current pulse, per Fig.3 and derated above T
A
=25
0
C per Fig.2
2. Measured on copper Leaf area of 1.57 in
2
(40mm
2
)
3. 8.3mm single half sine-wave, duty cycle=4 pulses minutes maximum.
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