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S2M

Description
1.5 A, 1000 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size110KB,2 Pages
ManufacturerCHENG-YI ELECTRONIC CO., LTD.
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S2M Overview

1.5 A, 1000 V, SILICON, RECTIFIER DIODE

S2M Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum reverse recovery time2 us
Maximum repetitive peak reverse voltage1000 V
Maximum average forward current1.5 A
Maximum non-repetitive peak forward current50 A
S2A thru S2M SERIES
SURFACE MOUNT RECTIFIER
CHENG- YI
ELECTRONIC
VOLTAGE RANGE 50 TO 1000 Volts
CURRENT 2.0 Amperes
SMB/DO-214AA
FEATURES
For surface mounted applications
High tempreature metallurgically bonded-no
compression contacts as found in other
diode-constructed rectifiers
Glass passivated junction
Built-in strain relief
Easy pick and place
Plastic package has Underwrites Laboratory
Flamability Classification 94V-O
Complete device submersible temperature of
260
0
C for 10 seconds solder bath
.075(1.91)
.083(2.11)
.130(3.30)
.155(3.94)
.160(4.06)
.185(4.70)
.006(.152)
.012(.305)
.083(2.13)
.096(2.44)
.030(0.76)
.050(1.27)
.004(.102)
.008(.203)
MECHANICAL DATA
Case:JEDEC DO-214AA molded plastic
Terminals:Solder plated solderable per
MIL-STD-750, Method 2026
Polarity:Indicated by cathode band
Standard Packaging: 12mm tape (EIA STD EIA-481)
Weight:0.003 ounce, 0.093 gram
.200(5.08)
.220(5.59)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
0
C ambient temperature unless otherwise specified.
Signle phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current, at
T L =110 C
0
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
T
RR
C
J
R
JL
S2A
50
35
50
S2B
100
70
100
S2D
200
140
200
2.0
60.0
1.10
5.0
200
2.5
30.0
16
S2G
400
280
400
S2J
600
420
600
S2K
800
560
800
S2M
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
Amps
Volts
A
S
pF
0
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 2.0A
Maximum DC Reverse Current at Rated
DC Blocking Voltage
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Maximum Thermal Resistance (Note 3)
Operating and Storage Temperature Range
@T
A
=25
0
C
@T
A
=125
0
C
C/W
0
T
J
T
STG
-50 to +150
C
Notes : 1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, Irr=0.25A
2. Measured at 1 MHz and Applied Vr= 4.0 volts
3. 8.0mm
2
(0.13mm thick) land areas

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S2M S2A S2B S2G S2J S2D S2K
Description 1.5 A, 1000 V, SILICON, RECTIFIER DIODE NKK SWITCHES - S2A - SWITCH; TOGGLE; SPDT; 20A; 250VAC FAIRCHILD SEMICONDUCTOR - S2B - STANDARD DIODE; 2A; 100V; DO-214AA 1.5 A, 400 V, SILICON, RECTIFIER DIODE 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA 1.5 A, 200 V, SILICON, RECTIFIER DIODE 2 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AA
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