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BFC14

Description
Power Field-Effect Transistor, 56A I(D), 400V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size69KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric View All

BFC14 Overview

Power Field-Effect Transistor, 56A I(D), 400V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

BFC14 Parametric

Parameter NameAttribute value
MakerTT Electronics plc
Reach Compliance Codecompliant
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage400 V
Maximum drain current (ID)56 A
Maximum drain-source on-resistance0.075 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PUFM-D4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)224 A
Certification statusNot Qualified
GuidelineCECC
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
transistor applicationsSWITCHING
Transistor component materialsSILICON
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