DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ256; BFQ256A
PNP video transistors
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC05
1997 Oct 02
Philips Semiconductors
Product specification
PNP video transistors
FEATURES
•
High breakdown voltages
•
Low output capacitance
•
High gain bandwidth
•
Good thermal stability
•
Gold metallization ensures
excellent reliability
•
Surface mounting.
APPLICATIONS
•
Buffer/driver in high-resolution
colour graphics monitors.
DESCRIPTION
PNP video transistor in a SOT223
plastic package.
NPN complements: BFQ236 and
BFQ236A.
PINNING
PIN
1
2
3
4
base
emitter
collector
DESCRIPTION
emitter
page
BFQ256; BFQ256A
4
1
Top view
2
3
MSB002 - 1
Fig.1
Simplified outline
(SOT223).
QUICK REFERENCE DATA
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BFQ256
BFQ256A
V
CER
collector-emitter voltage
BFQ256
BFQ256A
I
C
P
tot
h
FE
f
T
collector current (DC)
total power dissipation
DC current gain
transition frequency
BFQ256
BFQ256A
Note
1. T
s
is the temperature at the soldering point of the collector lead.
T
s
≤
115
°C;
note 1
I
C
=
−50
mA; V
CE
=
−10
V
I
C
=
−50
mA; V
CE
=
−10
V; f = 100 MHz
1
0.8
1.3
1.2
−
−
GHz
GHz
R
BE
= 100
Ω
−
−
−
−
20
−
−
−
−
30
−95
−110
−300
2
−
V
V
mA
W
open emitter
−
−
−
−
−100
−115
V
V
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1997 Oct 02
2
Philips Semiconductors
Product specification
PNP video transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BFQ256
BFQ256A
V
CEO
collector-emitter voltage
BFQ256
BFQ256A
V
CER
collector-emitter voltage
BFQ256
BFQ256A
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector lead.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Notes
1. T
s
is the temperature at the soldering point of the collector lead.
PARAMETER
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
T
s
≤
115
°C;
note 1; see Fig.3
open collector
R
BE
= 100
Ω
open base
CONDITIONS
open emitter
BFQ256; BFQ256A
MIN.
−
−
−
−
−
−
−
−
−
−65
−
MAX.
−100
−115
−65
−95
−95
−110
−3
−300
2
+150
175
V
V
V
V
V
V
V
UNIT
mA
W
°C
°C
CONDITIONS
VALUE
30
UNIT
K/W
thermal resistance from junction to soldering point T
s
≤
115
°C;
P
tot
= 2 W;
notes 1 and 2
2. Device mounted on a printed-circuit board measuring 40
×
40
×
1 mm (collector pad 35
×
17 mm).
1997 Oct 02
3
Philips Semiconductors
Product specification
PNP video transistors
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
BFQ256
BFQ256A
V
(BR)CEO
collector-emitter breakdown voltage I
C
=
−10
mA; I
B
= 0
BFQ256
BFQ256A
V
(BR)CER
collector-emitter breakdown voltage I
C
=
−1
mA; R
BE
= 100
Ω
BFQ256
BFQ256A
I
CES
I
CBO
h
FE
C
c
C
cb
f
T
collector-emitter cut-off current
collector-base cut-off current
DC current gain
collector capacitance
collector-base capacitance
transition frequency
BFQ256
BFQ256A
I
B
= 0; V
CE
=
−50
V
I
E
= 0; V
CB
=
−50
V
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
= i
c
= 0; V
CB
=
−10
V; f = 1 MHz;
see Fig.6
I
C
=
−50
mA; V
CE
=
−10
V;
f = 100 MHz; see Fig.5
PARAMETER
collector-base breakdown voltage
CONDITIONS
I
C
=
−100 µA;
I
E
= 0
BFQ256; BFQ256A
MIN.
−100
−115
−65
−95
−95
−110
−
−
−
−
TYP.
−
−
−
−
−
−
−
−
30
1.9
1.6
MAX.
−
−
−
−
−
−
−100
−20
−
−
−
UNIT
V
V
V
V
V
V
µA
µA
pF
pF
I
C
=
−50
mA; V
CE
=
−10
V; see Fig.4 20
1
0.8
1.3
1.2
−
−
GHz
GHz
−400
handbook, halfpage
IC
(mA)
−300
MRA606
handbook, halfpage
3
MRA600
Ptot
(W)
2
−200
1
−100
BFQ256
0
0
−20
−40
−60
−80
BFQ256A
0
0
50
100
150
200
−100
−120
VCER (V)
Ts (
o
C)
R
BE
≤
100
Ω.
Fig.2 DC SOAR.
Fig.3 Power derating curve.
1997 Oct 02
4
Philips Semiconductors
Product specification
PNP video transistors
BFQ256; BFQ256A
handbook, halfpage
50
MBB449
MBC970
2.0
handbook, halfpage
fT
(GHz)
hFE
40
1.5
BFQ256
30
BFQ256A
1.0
20
0
−100
−200
IC (mA)
−300
0.5
0
−50
−100
IC (mA)
−150
V
CE
=
−10
V.
V
CE
=
−10
V; T
amb
= 25
°C.
Fig.4
DC current gain as a function of
collector current; typical values.
Fig.5
Transition frequency as a function of
collector current; typical values.
handbook, halfpage
5
MRA605
Ccb
(pF)
4
3
2
1
0
−5
−10
−15
−20
−25
−30
−35
VCB (V)
I
C
= 0; f = 1 MHz.
Fig.6
Collector-base capacitance as a function of
collector-base voltage; typical values.
1997 Oct 02
5
京公网安备 11010802033920号
EEWORLD
