TRANSISTOR Si, PNP, RF POWER TRANSISTOR, TO-126, BIP RF Power
| Parameter Name | Attribute value |
| Maker | NXP |
| Reach Compliance Code | compliant |
| Other features | HIGH RELIABILITY |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 0.25 A |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 15 |
| JEDEC-95 code | TO-126 |
| JESD-30 code | R-PSFM-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | PNP |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 400 MHz |
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