DISCRETE SEMICONDUCTORS
DATA SHEET
BFR92A
NPN 5 GHz wideband transistor
Product specification
Supersedes data of September 1995
File under discrete semiconductors, SC14
1997 Oct 29
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
FEATURES
•
High power gain
•
Low noise figure
•
Low intermodulation distortion.
APPLICATIONS
•
RF wideband amplifiers and
oscillators.
DESCRIPTION
NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT92.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
page
BFR92A
3
1
Top view
Marking code:
P2p.
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
C
re
f
T
G
UM
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
maximum unilateral power gain
T
s
≤
95
°C
I
C
= i
c
= 0; V
CE
= 10 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 10 V; f = 500 MHz
I
C
= 15 mA; V
CE
= 10 V; f = 1 GHz;
T
amb
= 25
°C
I
C
= 15 mA; V
CE
= 10 V; f = 2 GHz;
T
amb
= 25
°C
F
V
O
noise figure
output voltage
I
C
= 5 mA; V
CE
= 10 V; f = 1 GHz;
Γ
s
=
Γ
opt
; T
amb
= 25
°C
d
im
=
−60
dB; I
C
= 14 mA; V
CE
= 10 V;
R
L
= 75
Ω;
f
p
+ f
q
−
f
r
= 793.25 MHz
CONDITIONS
−
−
−
−
0.35
5
14
8
2.1
150
TYP.
MAX.
20
15
25
300
−
−
−
−
−
−
UNIT
V
V
mA
mW
pF
GHz
dB
dB
dB
mV
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
T
s
≤
95
°C;
note 1; see Fig.3
open emitter
open base
open collector
CONDITIONS
−
−
−
−
−
−65
−
MIN.
MAX.
20
15
2
25
300
+150
175
UNIT
V
V
V
mA
mW
°C
°C
1997 Oct 29
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
PARAMETER
collector leakage current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power
gain (note 1)
CONDITIONS
I
E
= 0; V
CB
= 10 V
I
C
= 15 mA; V
CE
= 10 V; see Fig.4
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz;
see Fig.5
I
C
= i
c
= 0; V
EB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
CE
= 10 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 10 V; f = 500 MHz;
see Fig.6
I
C
= 15 mA; V
CE
= 10 V; f = 1 GHz;
T
amb
= 25
°C
I
C
= 15 mA; V
CE
= 10 V; f = 2 GHz;
T
amb
= 25
°C
F
noise figure
I
C
= 5 mA; V
CE
= 10 V; f = 1 GHz;
Γ
s
=
Γ
opt
; T
amb
= 25
°C;
see Figs 13 and 14
I
C
= 5 mA; V
CE
= 10 V; f = 2 GHz;
Γ
s
=
Γ
opt
; T
amb
= 25
°C;
see Figs 13 and 14
V
O
d
2
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and G
UM
2. Measured on the same die in a SOT37 package (BFR90A).
3. d
im
=
−60
dB (DIN 45004B); I
C
= 14 mA; V
CE
= 10 V; R
L
= 75
Ω;
VSWR
<
2; T
amb
= 25
°C
V
p
= V
O
at d
im
=
−60
dB; f
p
= 795.25 MHz;
V
q
= V
O
−6
dB; f
q
= 803.25 MHz;
V
r
= V
O
−6
dB; f
r
= 805.25 MHz;
measured at f
p
+ f
q
−
f
r
= 793.25 MHz.
4. I
C
= 14 mA; V
CE
= 10 V; R
L
= 75
Ω;
VSWR
<
2; T
amb
= 25
°C
V
p
= 60 mV at f
p
= 250 MHz;
V
q
= 60 mV at f
q
= 560 MHz;
measured at f
p
+ f
q
= 810 MHz.
output voltage
second order intermodulation
distortion
notes 2 and 3
notes 2 and 4; see Fig.16
MIN.
−
40
−
−
−
−
−
−
−
TYP.
−
90
0.6
1.2
0.35
5
14
8
2.1
PARAMETER
CONDITIONS
VALUE
260
BFR92A
UNIT
K/W
thermal resistance from junction to soldering point T
s
≤
95
°C;
note 1
MAX.
50
−
−
−
−
−
−
−
−
UNIT
nA
pF
pF
pF
GHz
dB
dB
dB
−
3
−
dB
−
−
150
−50
−
−
mV
dB
S
21
=
10 log ------------------------------------------------------------- dB .
- ˙
2
2
1
–
S
11
1
–
S
22
2
1997 Oct 29
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
handbook, full pagewidth
2.2 nF
2.2 nF
VBB
33 kΩ
L2
L3
1 nF
1 nF
L1
1 nF
300
Ω
DUT
75
Ω
output
VCC
75
Ω
input
3.3 pF
18
Ω
0.82 pF
MBB269
L1 = L3 = 5
µH
choke.
L2 = 3 turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm.
Fig.2 Intermodulation distortion and second harmonic distortion MATV test circuit.
MEA425 - 1
400
handbook, halfpage
Ptot
(mW)
300
handbook, halfpage
120
MCD074
h FE
80
200
40
100
0
0
50
100
150
T (
o
C)
s
200
0
0
10
20
I C (mA)
30
V
CE
= 10 V; T
j
= 25
°C.
Fig.4
Fig.3 Power derating curve.
DC current gain as a function of collector
current; typical values.
1997 Oct 29
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
MBB274
MBB275
handbook, halfpage
1
Cc
(pF)
handbook, halfpage
6
0.8
fT
(GHz)
4
0.6
0.4
2
0.2
0
0
5
10
15
VCB (V)
20
0
0
10
20
I C (mA)
30
I
C
= i
c
= 0; f = 1 MHz; T
j
= 25
°C.
V
CE
= 10 V; f = 500 MHz; T
amb
= 25
°C.
Fig.5
Collector capacitance as a function of
collector-base voltage; typical values.
Fig.6
Transition frequency as a function of
collector current; typical values.
handbook,
30
halfpage
MBB278
handbook,
30
halfpage
MBB279
gain
(dB)
MSG
20
G UM
gain
(dB)
20
MSG
G UM
10
10
0
0
5
10
15
20
0
25
IC (mA)
0
5
10
15
25
20
I C (mA)
V
CE
= 10 V; f = 500 MHz.
MSG = maximum stable gain;
G
UM
= maximum unilateral power gain.
V
CE
= 10 V; f = 1 GHz.
MSG = maximum stable gain;
G
UM
= maximum unilateral power gain.
Fig.7
Gain as a function of collector current;
typical values.
Fig.8
Gain as a function of collector current;
typical values.
1997 Oct 29
5
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