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BFT33AR1

Description
Small Signal Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size36KB,2 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BFT33AR1 Overview

Small Signal Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN

BFT33AR1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTT Electronics plc
package instructionTO-39, 3 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-39
JESD-30 codeO-MBCY-W3
JESD-609 codee1
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
BFT33A
MECHANICAL DATA
Dimensions in mm(inches)
8.89 (0.35)
9.40 (0.37)
NPN SILICON TRANSISTOR
7.75 (0.305)
8.51 (0.335)
FEATURES
6.10 (0.240)
6.60 (0.260)
• FAST SWITCHING
• HIGH PULSE POWER
0.89
max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
12.70
(0.500)
min.
5.08 (0.200)
typ.
APPLICATIONS
2.54
(0.100)
• POWER SWITCHING CIRCUITS
• MOTOR CONTROL
2
1
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
3
45°
TO39
Pin 1 = Emitter
Pin 2 = Base
Pin 3 = Collector
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
IB
Ptot
T
amb
Tstg,
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current
Base Current
Total Power Dissipation at Tcase
25°C
Ambient Operating Temperature
Storage Temperature
100V
80V
5V
3A
2A
1W
-55°C to +200°C
-55°C to +200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 3081
Issue 1

BFT33AR1 Related Products

BFT33AR1
Description Small Signal Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
Is it Rohs certified? conform to
Maker TT Electronics plc
package instruction TO-39, 3 PIN
Reach Compliance Code compliant
ECCN code EAR99
Maximum collector current (IC) 3 A
Collector-emitter maximum voltage 80 V
Configuration SINGLE
Minimum DC current gain (hFE) 15
JEDEC-95 code TO-39
JESD-30 code O-MBCY-W3
JESD-609 code e1
Number of components 1
Number of terminals 3
Package body material METAL
Package shape ROUND
Package form CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type NPN
Certification status Not Qualified
surface mount NO
Terminal surface TIN SILVER COPPER
Terminal form WIRE
Terminal location BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications SWITCHING
Transistor component materials SILICON
Nominal transition frequency (fT) 50 MHz

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