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SB16200DC

Description
16 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB
Categorysemiconductor    Discrete semiconductor   
File Size55KB,4 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
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SB16200DC Overview

16 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB

WTE
POWER SEMICONDUCTORS
SB16150DC – SB16200DC
Pb
16A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
Features
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Current Capability
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
A
C
J
B
D
PIN 1
2
3
E
G
H
K
P
P
Mechanical Data
Case: D PAK/TO-263, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 1.7 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
2
PIN 1 -
PIN 3 -
+
Case, PIN 2
Dim
A
9.80
10.40
B
9.60
10.60
C
4.40
4.80
D
8.50
9.10
E
2.80
G
1.00
1.40
H
0.90
J
1.20
1.40
K
0.30
0.70
P
2.35
2.75
All Dimensions in mm
D
2
PAK/TO-263
Min
Max
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T
C
= 90°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
j
R
θJC
T
j
, T
STG
SB16150DC
SB16200DC
Unit
150
105
16
150
0.92
0.5
100
700
2.0
-65 to +150
200
140
V
V
A
A
V
mA
pF
°C/W
°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed
on rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 8.0A
@T
A
= 25°C
@T
A
= 100°C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.
SB16150DC – SB16200DC
1 of 4
© 2008 Won-Top Electronics

SB16200DC Related Products

SB16200DC SB16150DC SB16150DC_08
Description 16 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB 16 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB 16 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB

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