PG05DXTE6 datasheet, PDF - EEWORLD Datasheet

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PG05DXTE6: Description30 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE; CategoryDiscrete semiconductor diode; File Size44KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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PG05DXTE6 Overview

30 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE

PG05DXTE6 Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	R-PDSO-F6
Contacts	6
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum breakdown voltage	7.2 V
Minimum breakdown voltage	6.1 V
Configuration	COMMON ANODE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-PDSO-F6
Maximum non-repetitive peak reverse power dissipation	30 W
Number of components	4
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
polarity	UNIDIRECTIONAL
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	5 V
surface mount	YES
technology	AVALANCHE
Terminal form	FLAT
Terminal location	DUAL

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SEMICONDUCTOR

TECHNICAL DATA

Protection in Portable Electronics Applications.

PG05DXTE6

TVS Diode for ESD

Protection in Portable Electronics

B

B1

FEATURES

30 Watts peak pulse power (tp=8/20 )s

IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)

Small package for use in portable electronics.

Suitable replacement for Multi-Layer Varistors in ESD protection applications.

Protects one I/O or power line.

Low clamping voltage.

H

P

3

4

A1

Transient protection for data lines to

A

C

1

6

C

2

5

D

DIM

A

A1

B

B1

C

D

H

J

P

MILLIMETERS

_

1.6 + 0.05

_

1.0 + 0.05

_ 0.05

1.6 +

_

1.2 + 0.05

0.50

_

0.2 + 0.05

_

0.5 + 0.05

_

0.12 + 0.05

5

Low leakage current.

APPLICATIONS

Cell phone handsets and accessories.

Microprocessor based equipment.

Personal digital assistants (PDA’s)

Notebooks, desktops, & servers.

Portable instrumentation.

Pagers peripherals.

1.

2.

3.

4.

5.

6.

(TVS) D1 CATHODE

COMMON ANODE

(TVS) D2 CATHODE

(TVS) D3 CATHODE

N. C.

(TVS) D4 CATHODE

TES6

Marking

6

5

4

J

Lot No.

Type Name

MAXIMUM RATING (Ta=25)

CHARACTERISTIC

Peak Pulse Power (tp=8/20 s)

Junction Temperature

Storage Temperature

SYMBOL

P

PK

T

j

T

stg

RATING

30

150

-55 150

UNIT

W

1

5D

2

6

D4

3

4

D3

5

D1

D2

1

2

3

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Junction Capacitance

SYMBOL

V

RWM

V

BR

I

R

C

J

I

t

=1mA

V

RWM

=3V

V

R

=0V, f=1MHz

TEST CONDITION

-

MIN.

-

6.1

-

TYP.

-

MAX.

5

7.2

0.5

15

UNIT

V

A

pF

2010. 2. 5

Revision No : 4

1/2

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