CLD340
High Temperature AlGaAs Photodiode
0.156 (3.96)
0.136 (3.45)
0.165 (4.19)
0.145 (3.68)
1.00 (25.4) min.
®
Clairex
Technologies, Inc
.
January, 2002
0.100 (2.54) dia.
0.215 (5.46)
0.205 (5.21)
ANODE
0.190 (4.83)
0.176 (4.47)
CATHODE
0.025 (0.64) max.
0.019 (0.48)
0.010 (0.25) max
0.016 (0.41)
0.147 (3.73)
0.137 (3.48)
ALL DIMENSIONS ARE IN INCHES(MILLIMETERS)
Case 3
features
•
usable at 225°C
•
880nm wavelength
•
narrow response range
•
hermetically sealed TO-46
package
•
±35° acceptance angle
description
The CLD340 is a high temperature
AlGaAs photodiode designed for
sensitivity from 830 to 910nm. This
specialty detector eliminates the
need for signal modulation or
filtering of ambient light when used
where background illumination
could cause problems. The 0.040"
by 0.040" chip is mounted in a flat
window TO-46 package. The
CLE335 is recommended for
optical coupling.
absolute maximum ratings
(T
A
= 25°C unless otherwise stated)
storage temperature ....................................................................... -65°C to +250°C
operating temperature .................................................................... -65°C to +225°C
lead soldering temperature
(1)
...........................................................................260°C
reverse voltage ................................................................................................... 10V
continuous power dissipation
(2)
..................................................................... 250mW
notes:
1. 0.06” (1.5mm) from the header for 5 seconds maximum.
2. Derate linearly 1.0mW/°C from 25°C free air temperature to T
A
= +225°C.
fundamental characteristics
spectral response
100
90
relative response (percent)
80
70
60
50
40
30
20
10
0
600
700
800
900
1000
wavelength (nanometers)
110
AlGaAs
photodiode
silicon
photodiode
light current vs temp.
20
18
16
light current (microamps)
14
12
10
8
6
4
2
0
10
-4
dark current vs temp.
1.0
short circuit dark current (nA)
H = 1mW/cm², and
λ
= 850nm at 25°C
CLE335 source at same
temperature as CLDX340.
CLD340
10
-1
10
-2
10
-3
0
50
100
150
temperature (°C)
200
25
0
50
100
150
temperature (°C)
200
25
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Revised 3/6/06
Clairex Technologies, Inc.
Phone: 972-265-4900
1301 East Plano Parkway
Fax: 972-265-4949
Plano, Texas 75074-8524
www.clairex.com
CLD340
High Temperature AlGaAs Photodiode
electrical characteristics at T
A
= 25°C
(unless otherwise noted)
symbol
I
SC
I
D
R
S
V
BR
C
j
Θ
HP
t
r
, t
f
parameter
Short-circuit current
(3)
Dark current
Shunt resistance
Reverse breakdown
Junction capacitance
Total angle at half sensitivity points
0utput rise and fall time
(3)
min
2.0
-
-
20
-
-
-
typ
3.5
0.1
3000
-
170
70
1.0
max
-
1.0
-
-
-
-
-
units
µA
nA
Meg.Ω
V
pF
deg.
µs
®
Clairex
Technologies, Inc
.
test conditions
V
BIAS
= 0V, E
e
= 1mW/cm
2
V
R
= 5V, E
e
= 0
V
R
= 10mV
I
R
= 10µA
V
BIAS
= 0, f = 1MHz
R
L
= 50Ω, V
R
= 5V
note:
3. Radiation source is an aluminum gallium arsenide IRED with a peak emission wavelength of 850nm.
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Clairex Technologies, Inc.
Phone: 972-265-4900
1301 East Plano Parkway
Fax: 972-265-4949
Plano, Texas 75074-8524
www.clairex.com
京公网安备 11010802033920号
EEWORLD
