CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C816J3
Issued Date : 2003.05.15
Revised Date : 2009.02.04
Page No. : 1/7
BTB1412J3
Features
•
Low V
CE
(sat), V
CE
(sat)=-0.5 V (max), at I
C
/ I
B
= -4A / -0.1A
•
Excellent DC current gain characteristics
•
Complementary to BTD2118J3
•
Pb-free package
BV
CEO
I
C
R
CESAT
-30V
-5A
75mΩ typ.
Symbol
BTB1412J3
Outline
TO-252
B：Base
C：Collector
E：Emitter
B
C
E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1
.
Single Pulse Pw=10ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
(DC)
I
C
(Pulse)
Pd(T
A
=25℃)
Pd(T
C
=25℃)
Tj
Tstg
Limits
-40
-30
-6
-5
-10
1
10
150
-55~+150
Unit
V
V
V
*1
A
W
°C
°C
BTB1412J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*h
FE
f
T
Cob
Min.
-40
-30
-6
-
-
-
180
-
-
Typ.
-
-
-
-
-
-
-
120
60
Max.
-
-
-
-0.5
-0.5
-0.5
390
-
-
Unit
V
V
V
μA
μA
V
-
MHz
pF
Spec. No. : C816J3
Issued Date : 2003.05.15
Revised Date : 2009.02.04
Page No. : 2/7
Test Conditions
I
C
=-50μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50μA, I
C
=0
V
CB
=-25V, I
E
=0
V
EB
=-5V, I
C
=0
I
C
=-4A, I
B
=-0.1A
V
CE
=-2V, I
C
=-0.5A
V
CE
=-6V, I
C
=-50mA, f=30MHz
V
CB
=-20V, f=1MHz
*Pulse Test : Pulse Width
≤380μs,
Duty Cycle≤2%
Ordering Information
Device
BTB1412J3
Package
TO-252
(Pb-free)
Shipping
2500 pcs / Tape & Reel
Marking
B1412
BTB1412J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
Saturation Voltage---(mV)
VCE=2V
Spec. No. : C816J3
Issued Date : 2003.05.15
Revised Date : 2009.02.04
Page No. : 3/7
Saturation Voltage vs Collector Current
10000
VCESAT
1000
IC=100IB
IC=40IB
IC=50IB
Current Gain---HFE
100
VCE=1V
100
IC=30IB
10
1
10
100
1000
10000
Collector Current---IC(mA)
10
1
10
100
1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
10000
Saturation Voltage---(mV)
VBESAT@IC=10IB
Output Characteristics
5
Collector Current---IC(A)
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
IB=20mA
1000
IB=10mA
IB=6mA
IB=4mA
IB=2mA
IB=0
100
1
10
100
1000
Collector Current---IC(mA)
10000
0
2
4
Collector-to-Emitter Voltage---VCE(V)
6
Output Characteristics
9
8
Collector Current---IC(A)
7
6
5
4
3
2
1
0
0
IB=25mA
IB=20mA
IB=15mA
IB=10mA
IB=5mA
IB=0
IB=50mA
Power Derating Curve
12
Power Dissipation---PD(W)
10
8
6
4
2
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
0
50
100
150
200
Case Temperature---TC(℃)
BTB1412J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Power Derating Curve
1.2
Power Dissipation---PD(W)
1
0.8
0.6
0.4
0.2
0
0
50
100
150
200
Ambient Temperature---TA(℃ )
Spec. No. : C816J3
Issued Date : 2003.05.15
Revised Date : 2009.02.04
Page No. : 4/7
Recommended soldering footprint
BTB1412J3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C816J3
Issued Date : 2003.05.15
Revised Date : 2009.02.04
Page No. : 5/7
Carrier Tape Dimension
BTB1412J3
CYStek Product Specification
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