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BTP6520N3

Description
High Voltage PNP Epitaxial Planar Transistor
File Size144KB,4 Pages
ManufacturerCYSTEKEC
Websitehttp://www.cystekec.com/
Download Datasheet View All

BTP6520N3 Overview

High Voltage PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
High Voltage PNP Epitaxial Planar Transistor
Spec. No. : C321N3
Issued Date : 2003.04.12
Revised Date :
Page No. : 1/4
BTP6520N3
Features
High Breakdown Voltage:BVCEO≥-350V
Complementary to BTN6517N3
Symbol
BTP6520N3
SOT-23
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current---continuous
Power Dissipation @TA=25℃
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
-350
-350
-5
-500
225
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
BTP6520N3
CYStek Product Specification
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Index Files: 687  327  1699  9  62  14  7  35  1  2 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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