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Z1270

Description
3000 W, BIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size22KB,1 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
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Z1270 Overview

3000 W, BIDIRECTIONAL, SILICON, TVS DIODE

Z1270 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Parts packaging codeDO-41
package instructionO-PALF-W2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY, LOW LEAKAGE CURRENT
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance2100 Ω
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
Certification statusNot Qualified
Nominal reference voltage270 V
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Maximum voltage tolerance10%
Working test current0.82 mA
Z1110 - Z1400
V
Z
: 110 - 400 Volts
P
D
: 1 Watt
FEATURES :
* Complete voltage range 110 to 400 Volts
* High peak reverse power dissipation
* High reliability
* Low leakage current
SILICON ZENER DIODES
DO - 41
1.00 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
Rating at 25
°
C ambient temperature unless otherwise specified
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
Rating
DC Power Dissipation at T
L
= 50
°C
(Note1)
Maximum Forward Voltage at I
F
= 200 mA
Maximum Thermal Resistance Junction to Ambient Air (Note2)
Junction Temperature Range
Storage Temperature Range
Note :
Symbol
P
D
V
F
RθJA
T
J
Ts
Value
1.0
1.2
170
- 55 to + 175
- 55 to + 175
Unit
Watt
Volts
K/W
°C
°C
(1) T
L
= Lead temperature at 3/8 " (9.5mm) from body
(2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case.
ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified
Nominal Zener
Maximum Zener
Voltage
Impedance
TYPE
V
Z
@ I
ZT
I
ZT
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
(V)
(mA)
(Ω)
(Ω)
Z1110
Z1120
Z1130
Z1150
Z1160
Z1180
Z1200
Z1240
Z1250
Z1270
Z1300
Z1330
Z1380
Z1400
110
120
130
150
160
180
200
240
250
270
300
330
380
400
2.3
2.0
1.9
1.7
1.6
1.4
1.2
0.93
0.90
0.82
0.75
0.70
0.60
0.55
450
550
700
1000
1100
1200
1500
1800
2000
2100
2300
2500
2700
2800
4000
4500
5000
6000
6500
7000
8000
8500
9000
9000
9500
9500
9500
9500
Maximum Reverse
Leakage Current
I
R
@ V
R
(V)
(
µ
A)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
83.6
91.2
98.8
114.0
121.6
136.8
152.0
182.4
190
205
228
250
288
304
Maximum DC
Zener Current
I
ZM
(mA)
8.6
7.8
7.0
6.4
5.8
5.2
4.7
3.8
3.6
3.3
3.0
2.8
2.4
2.3
I
ZK
(mA)
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Note :
( 1 ) The type number listed have a standard tolerance on the nominal zener voltage of
±
10%.
A standard tolerance of
±
5% on individual units is also available and is indicated by suffixing
"A" to the standard type number.
UPDATE : MARCH 1, 2002

Z1270 Related Products

Z1270 Z1400 Z1380 Z1330 Z1300 Z1240
Description 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE

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