LAB
MECHANICAL DATA
Dimensions in mm
10.40
10.80
3.0
4.50
4.81
0.75
0.95
3.50
Dia.
3.70
SEME
BUL54A-T257F
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
Designed for use in
electronic ballast applications
16.30
16.70
10.50
10.67
1 2 3
À
2.1
max.
Á
1.0 dia.
3 places
20 Min.
• SEMEFAB DESIGNED AND DIFFUSED DIE
•
•
•
•
HIGH VOLTAGE
FAST SWITCHING
HIGH ENERGY RATING
SURFACE MOUNT PACKAGES AVAILABLE
0.75
0.85
2.54
BSC
2.65
2.96
FEATURES
TO257- FLEXY LEAD
Pin 1 – Base
Pin 2 – Collector
Pin 3 – Emitter
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Triple Guard Rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
I
C(PK)
I
B
P
tot
T
stg
Semelab plc.
Collector – Base Voltage
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Continuous Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
case
= 25°C
Operating and Storage Temperature Range
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
1000V
500V
10V
4A
7A
2A
50W
–55 to +150°C
Prelim. 01/01
LAB
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
V
CEO(sus)
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
SEME
BUL54A-T257F
Test Conditions
Min.
500
1000
10
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS
Collector – Emitter Sustaining Voltage I
C
= 10mA
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Base Cut–Off Current
Collector – Emitter Cut–Off Current
Emitter Cut–Off Current
I
C
= 1mA
I
E
= 1mA
V
CB
= 1000V
T
C
= 125°C
I
B
= 0
V
EB
= 9V
I
C
= 0
I
C
= 0.1A
I
C
= 0.5A
I
C
= 1A
I
C
= 100mA
T
C
= 125°C
V
CE
= 5V
V
CE
= 5V
V
CE
= 1V
T
C
= 125°C
I
B
= 20mA
I
B
= 0.1A
I
B
= 0.2A
I
B
= 0.1A
I
B
= 0.2A
V
CE
= 4V
f = 1MHz
V
CE
= 500V
V
10
100
100
10
100
m
A
m
A
m
A
20
12
5
40
15
8
0.05
0.15
0.3
0.8
0.9
20
20
0.1
0.2
0.5
1.0
1.1
V
V
—
h
FE*
DC Current Gain
V
CE(sat)*
Collector – Emitter Saturation Voltage I
C
= 0.5A
I
C
= 1A
I
C
= 0.5A
I
C
= 1A
I
C
= 0.2A
V
CB
= 20V
V
BE(sat)*
Base – Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
Transition Frequency
Output Capacitance
f
t
C
ob
MHz
pF
* Pulse test t
p
= 300
m
s ,
d
< 2%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 01/01
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