SILICON PNP TRANSISTOR
BFX29
•
•
•
Hermetic TO-39 Metal package.
Ideally suited for Switching
and General Purpose Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
ICM
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Peak Collector Current
Total Power Dissipation at
TA = 25°C
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
60V
60V
5V
600mA
600mA
600mW
34mW/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJA
Parameters
Thermal Resistance, Junction To Ambient
Max.
292
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 3083
Issue 3
Page 1 of 3
Website:
http://www.semelab-tt.com
SILICON PNP TRANSISTOR
BFX29
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise stated)
Symbols
IEBO
Parameters
Emitter Cut-Off Current
Test Conditions
VEB = 5V
VEB = 3V
VCB = 60V
IC = 0
IC = 0
IE = 0
IE = 0
Tj = 100°C
Min.
Typ
220
4
1.0
0.5
0.03
0.15
0.7
0.85
Max.
500
100
500
50
2
0.40
0.90
1.30
Units
nA
ICBO
Collector Cut-Off Current
VCB = 50V
µA
VCE(sat)
VBE(sat)
(1)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
IC = 150mA
IC = 30mA
IC = 150mA
IC = 0.1mA
IC = 1.0mA
IB = 15mA
IB = 1.0mA
IB = 15mA
VCE = 10V
VCE = 10V
VCE = 10V
VCE = 10V
VCE = 10V
20
40
50
50
40
(1)
V
218
216
210
195
175
-
hFE
(1)
Forward-current transfer
ratio
IC = 10mA
IC = 50mA
IC = 150mA
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
IC = 50mA
f = 100MHz
VCB = 10V
f = 1.0MHz
VEB = 2V
f = 1.0MHz
IC = 0
VCE = 10V
TA = 25°C
IE = 0
100
280
MHz
Cobo
Output Capacitance
12
15
pF
Cibo
Input Capacitance
37
40
Notes
(1) Pulse Width
≤
380us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 3083
Issue 3
Page 2 of 3
SILICON PNP TRANSISTOR
BFX29
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
0.89
max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
2
1
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
3
45°
TO-39 (TO-205AD) METAL PACKAGE
Underside View
Pin 1 - Emitter
Pin 2 - Base
Pin 3 - Collector
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 3083
Issue 3
Page 3 of 3
Embedded System
京公网安备 11010802033920号
EEWORLD
