RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
| Parameter Name | Attribute value |
| Maker | YAGEO |
| package instruction | SMALL OUTLINE, R-PDSO-G4 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 0.06 A |
| Collector-emitter maximum voltage | 12 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 45 |
| highest frequency band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 code | R-PDSO-G4 |
| Number of components | 1 |
| Number of terminals | 4 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 1800 MHz |
| BFG94TRL13 | BFG25AXTRL13 | BFG94TRL | BG135TRL | BG135TRL13 | BFG25AXTRL | |
|---|---|---|---|---|---|---|
| Description | RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | RF Small Signal Bipolar Transistor, 0.0065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN | RF Small Signal Bipolar Transistor, 0.0065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN |
| package instruction | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Shell connection | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
| Maximum collector current (IC) | 0.06 A | 0.0065 A | 0.06 A | 0.15 A | 0.15 A | 0.0065 A |
| Collector-emitter maximum voltage | 12 V | 5 V | 12 V | 15 V | 15 V | 5 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 45 | 50 | 45 | 80 | 80 | 50 |
| highest frequency band | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND |
| JESD-30 code | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 4 | 4 | 4 | 4 | 4 | 4 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES | YES | YES |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 1800 MHz | 5000 MHz | 1800 MHz | 7000 MHz | 7000 MHz | 5000 MHz |
| Maker | YAGEO | - | YAGEO | YAGEO | YAGEO | YAGEO |
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