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BU126

Description
Power Bipolar Transistor, 6A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size38KB,1 Pages
ManufacturerCrimson Semiconductor Inc.
Download Datasheet Parametric View All

BU126 Overview

Power Bipolar Transistor, 6A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,

BU126 Parametric

Parameter NameAttribute value
MakerCrimson Semiconductor Inc.
Reach Compliance Codeunknown
Maximum collector current (IC)6 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment75 W
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
VCEsat-Max5 V
This Material Copyrighted By Its Respective Manufacturer
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