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BAT54_1

Description
0.2 A, 30 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size136KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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BAT54_1 Overview

0.2 A, 30 V, SILICON, SIGNAL DIODE

BAT54_1 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components1
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-3
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Diode component materialssilicon
Maximum power consumption limit0.2250 W
Diode typeSignal diode
Maximum repetitive peak reverse voltage30 V
Maximum average forward current0.2000 A
BAT54 / A / C / S
200m Watts Surface Mount Schottky Barrier Diode
SOT-23
0.020(0.51)
0.015(0.37)
Features
Low turn-on voltage
Fast switching
PN junction guard ring for transient and ESD
protection
0.080(2.05)
0.070(1.78)
0.024(0.61)
0.018(0.45)
0.120(3.05)
0.104(2.65)
0.055(1.40)
0.047(1.19)
0.098(2.50)
0.083(2.10)
0.041(1.05)
0.047(0.89)
Mechanical Data
Case: SOT-23, Molded plastic
Terminals: Solderable per MIIL-STD-202,
Method 208
Marking & Polarity: See diagram
Weight: 0.008 gram (approx.
)
0.043(1.10)
0.035(0.89)
0.006(0.15)
0.001(0.013)
0.024(0.61)
0.018(0.45)
0.007(0.178)
0.003(0.076)
Dimensions in inches and (millimeters)
BAT54 Marking:
KL1
BAT54A Marking:
KL2
BAT54C Marking:
KL3
BAT54S Marking:KL4
Maximum Ratings
T
A
=25
o
C unless otherwise specified
Type Number
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Repetitive Peak Forward Current
Forward Surge Current
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air
Operating and Storage Temperature Range
@ t=1.0s
Value
30
200
300
600
200
500
-65 to + 125
Units
V
mA
mA
mA
mW
o
C/W
o
C
V
RRM
V
RWM
V
R
I
F
I
FM
I
FSM
Pd
R
θJA
T
J
, T
STG
Symbol
V
(BR)R
I
R
V
F
Electrical Characteristics
Type Number
Reverse Breakdown Voltage (Note 1)
Reverse Leakage Current
(Note 1) VR=25V
Forward Voltage
(Note1)
IF=0.1mA
IF=1.0mA
IF= 10mA
IF = 30mA
IF=100mA
Min
30
-
Typ
-
--
Max
-
Units
V
uA
-
--
Junction Capacitance
VR=0, f=1.0MHz
Reverse Recovery Time (Note 2)
Notes:
1. Short Duration Pulse Test used to Minimize Self-Heating Effect.
2. Reverse Recovery Test Conditions: IF=10mA through IR=10mA to IR=1.0mA, RL=100Ω.
Cj
trr
-
-
2.0
240
320
400
500
1000
10
5.0
mV
pF
nS
Version: A06

BAT54_1 Related Products

BAT54_1 BAT54 BAT54A BAT54S
Description 0.2 A, 30 V, SILICON, SIGNAL DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE 0.3 A, 2 ELEMENT, SILICON, SIGNAL DIODE 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Number of terminals 3 3 3 3
Number of components 1 1 2 2
surface mount Yes YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location pair DUAL DUAL DUAL
Diode component materials silicon SILICON SILICON SILICON
Diode type Signal diode RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum repetitive peak reverse voltage 30 V 30 V 30 V 30 V
Is it Rohs certified? - conform to conform to conform to
Maker - Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
package instruction - ROHS COMPLIANT, PLASTIC PACKAGE-3 ROHS COMPLIANT, PLASTIC PACKAGE-3 ROHS COMPLIANT, PLASTIC PACKAGE-3
Reach Compliance Code - compli compli compli
ECCN code - EAR99 EAR99 EAR99
Configuration - SINGLE COMMON ANODE, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Maximum forward voltage (VF) - 0.24 V 0.24 V 0.24 V
JESD-30 code - R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Humidity sensitivity level - 1 1 1
Maximum non-repetitive peak forward current - 0.6 A 0.6 A 0.6 A
Maximum operating temperature - 125 °C 125 °C 125 °C
Minimum operating temperature - -65 °C -65 °C -65 °C
Maximum output current - 0.2 A 0.2 A 0.2 A
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - 260 260 260
Maximum power dissipation - 0.2 W 0.2 W 0.2 W
Maximum reverse recovery time - 0.005 µs 0.005 µs 0.005 µs
technology - SCHOTTKY SCHOTTKY SCHOTTKY
Maximum time at peak reflow temperature - 30 30 30

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