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BAV20W

Description
0.2 A, 250 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size86KB,1 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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BAV20W Overview

0.2 A, 250 V, SILICON, SIGNAL DIODE

BAV20W Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PDSO-G2
Humidity sensitivity level1
Maximum non-repetitive peak forward current2.5 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.25 W
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
BAV19W/BAV20W/BAV21W
410 mW High Voltage SMD Switching Diode
Small Signal Diode
SOD-123F
B
Features
These diodes are also available in DO-35,LL34 Package
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
C
A
E
F
Mechanical Data
Case : Flat lead SOD-323 small outline plastic package
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Polarity : Indicated by cathode band
Weight : 4.85±0.5 mg
Dimensions
A
B
C
D
E
F
Unit (mm)
Min
1.5
3.3
0.5
2.5
0.8
0.05
Max
1.7
3.7
0.7
2.7
1.0
0.2
Unit (inch)
Min
0.130
0.020
Max
0.146
0.028
0.059 0.067
0.098 0.106
0.031 0.039
0.002 0.008
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
Non-Repetitive Peak Forward Surge Current
Pulse Width= 1
μsec
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
Symbol
P
D
V
RRM
I
FRM
I
O
I
FSM
RθJA
T
J
, T
STG
Value
410
250
625
200
1.0
375
-65 to + 150
Units
mW
V
mA
mA
A
°C/W
°C
Electrical Characteristics
Type Number
BAV19W
Reverse Breakdown Voltage
BAV20W
BAV21W
Forward Voltage
I
F
=
I
F
=
BAV19W
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
BAV20W
BAV21W
V
R
=0, f=1.0MHz
(Note4)
C
J
Trr
5.0
50
pF
ns
(Note 3)
I
R
-
100
nA
100mA
200mA
V
F
(Note 2)
V
(BR)
Symbol
Min
120
200
250
-
-
Max
-
-
-
1.00
1.25
V
V
Units
Notes:1. Valid provided that electrodes are kept at ambient temperature
Notes:2. Test Condition : I
R
=100μA
Notes:3. Test Condition : BAV19W @ V
R
=100V, BAV20W @ VR=150V, BAV21W @ VR=200V
Notes:4. Test Condition : I
F
=I
R
=30mA, R
L
=100Ω, I
RR
=3mA
Version : C09

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