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KST812M4S62Z

Description
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size46KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

KST812M4S62Z Overview

Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon

KST812M4S62Z Parametric

Parameter NameAttribute value
MakerFairchild
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)90
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
KST812M3/M4/M5/M6/M7
KST812M3/M4/M5/M6/M7
General Purpose Transistor
2
1
SOT-23
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
Parameter
Value
-50
-40
-5
-100
350
150
Units
V
V
V
mA
mW
°C
Refer to KST5088 for graphs
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
: KST812M3
: KST812M4
: KST812M5
: KST812M6
: KST812M7
V
CE
(sat)
V
BE
(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
V
CE
= -6V, I
C
= -1mA
60
90
135
200
300
120
180
270
400
600
-0.5
-0.8
V
V
Test Condition
V
CB
= -40V, I
E
=0
V
EB
= -5V, I
C
=0
Min.
Max.
-100
-100
Units
nA
nA
I
C
= -30mA, I
B
= -3mA
V
CE
= -6V, I
C
= -1mA
Marking Code
Type
Mark
KST812M3
M3
KST812M 4
M4
Marking
KST812M5
M5
KST812M6
M6
KST812M7
M7
M3
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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