BZX85C3V3 - BZX85C 56
1.3 Watts Zener Diode
Pb
RoHS
COMPLIANCE
DO-41
Features
Silicon Planar Power Zener Diodes
For use in stabilizing and clipping circuits with
high power rating
The Zener voltages are graded according to
the international E24 standard. Replace suffix
“C”
Hermetically sealed by glass sleeve body
Mechanical Data
Case: Glass sleeve DO-41
Lead: Axial leads, solderable per
MIIL-STD-202, Method 2025
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 310 mg (approx.)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
Cambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
Pd
R
θJA
T
J
, T
STG
Value
1.3
130
-55 to + 175
Units
W
O
C /W
O
C
Notes: 1. Measured with pulses tp=5ms
2. Valid Provided that Lead are Kept at Ambient Temperature at a distance of
10 mm from case..
3. f = 1KHz.
Version: C08
ELECTRICAL CHARACTERISTICS
(TA=25
O
C
Device
Zener Voltage
Range (Note 1)
V
z
@ I
zt
Min V Max
BZX85C3V3
BZX85C3V6
BZX85C3V9
BZX85C4V3
BZX85C4V7
BZX85C5V1
BZX85C5V6
BZX85C6V2
BZX85C6V8
BZX85C7V5
BZX85C8V2
BZX85C9V1
BZX85C10
BZX85C11
BZX85C12
BZX85C13
BZX85C15
BZX85C16
BZX85C18
BZX85C20
BZX85C22
BZX85C24
BZX85C27
BZX85C30
BZX85C33
BZX85C36
BZX85C39
BZX85C43
BZX85C47
BZX85C51
BZX85C56
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
3.5
3.8
4.1
4.6
5.0
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
Dynamic Resistance
f
ZT
(Note 3)
Ohm
<20
<20
<15
<13
<13
<10
<7
<4
<3.5
<3
<5
<5
<7
<8
<9
<10
<15
<15
<20
<24
<25
<25
<30
<30
<35
<40
<50
<50
<90
<115
<120
I
ZT
mA
80
60
60
50
45
45
45
35
35
35
25
25
25
20
20
20
15
15
15
10
10
10
8
8
8
8
6
6
4
4
4
f
ZT
(Note 3)
Ohms
<400
<500
<500
<500
<600
<500
<400
<300
<300
<200
<200
<200
<200
<300
<350
<400
<500
<500
<500
<600
<600
<600
<750
<1000
<1000
<1000
<1000
<1000
<1500
<1500
<2000
unless otherwise noted)
Temperature
Coefficient of
Zener Voltage
V
Z
I
ZK
mA
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
@
I
Z
=
I
ZT
%
O
Max
Min / C
-0.08
-0.08
-0.07
-0.05
-0.03
-0.01
0
0.01
0.015
0.02
0.03
0.035
0.04
0.045
0.045
0.05
0.055
0.055
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
-0.05
-0.05
-0.02
0.01
0.04
0.04
0.045
0.055
0.06
0.065
0.07
0.075
0.08
0.08
0.085
0.085
0.09
0.09
0.09
0.09
0.095
0.095
0.095
0.095
0.095
0.095
0.095
0.095
0.095
0.095
0.095
Admissible
Zener
Reverse Leakage Current
Current
(Note 2)
I
Z
I
R
VR
uA
V
mA
<40
<20
<10
<3
<3
<1
<1
<1
<1
<1
<1
<1
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
1.0
1.0
1.0
1.0
1.0
1.5
2.0
3.0
4.0
4.5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
300
290
280
250
215.0
200.0
190.0
170.0
155.0
140.0
130.0
120.0
105.0
97.0
88.0
79.0
71.0
66.0
62.0
56.0
52.0
47.0
41.0
36.0
33.0
30.0
28.0
26.0
23.0
21.0
19.0
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, 300us pulse width, period = 5ms.
3. f = 1KHz.
RATINGS AND CHARACTERISTIC CURVES
(BZX85C SERIES)
FIG.1- PULSE THERMAL RESISTANCE VS
PULSE DURATION
FIG.2- DYNAMIC RESISTANCE VS ZENER CURRENT
FIG.3- DYNAMIC RESISTANCE VS ZENER CURRENT
FIG.4- THERMAL RESISTANCE VS LEAD LENGTH
FIG.5- ADMISSIBLE POWER DISSIPATION VS
AMBIENT TEMPERATURE
FIG.6- DYNAMIC RESISTANCE VS ZENER CURRENT
RATINGS AND CHARACTERISTIC CURVES
(BZX85C SERIES)
FIG.7- BREAKDOWN CHARACTERISTICS
FIG.8- BREAKDOWN CHARACTERISTICS
Embedded System
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