KTA539Y datasheet, PDF - EEWORLD Datasheet

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KTA539Y: DescriptionSmall Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size73KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTA539Y Overview

Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN

KTA539Y Parametric

Parameter Name	Attribute value
Maker	KEC
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	120
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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SEMICONDUCTOR

TECHNICAL DATA

LOW FREQUENCY AMPLIFIER

B

KTA539

EPITAXIAL PLANAR PNP TRANSISTOR

C

FEATURES

Complementary to KTC815.

N

K

D

G

E

A

Collector-Base Voltage : V

CBO

=-60V.

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

)

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

RATING

-60

-45

-5

-200

625

150

-55 150

UNIT

V

M

H

F

DIM

A

B

C

D

E

F

G

H

J

K

L

M

N

MILLIMETERS

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

0.45

_

14.00 + 0.50

0.55 MAX

2.30

0.45 MAX

1.00

V

mA

mW

L

1

2

3

C

J

1. EMITTER

2. BASE

3. COLLECTOR

TO-92

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Base-Emitter Voltage

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

Note : h

FE

Classification

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

FE

(Note)

V

BE

V

CE(sat)

V

BE(sat)

f

T

C

ob

TEST CONDITION

I

C

=-100 A, I

E

=0

I

C

=-10mA, I

B

=0

I

E

=-10 A, I

C

=0

V

CB

=-45V, I

E

=0

V

EB

=-3V, I

C

=0

V

CE

=-1V, I

C

=-50mA

V

CE

=-1V, I

C

=-10mA

I

C

=-150mA, I

B

=-15mA

I

C

=-150mA, I

B

=-15mA

V

CE

=-10V, I

C

=-10mA

V

CB

=-10V, I

E

=0, f=1MHz

MIN.

-60

-45

5

-

70

-0.6

-

100

-

TYP.

-

-0.65

-0.25

-0.9

-

6

MAX.

-

-0.1

240

-0.9

-0.5

-1.2

-

V

MHz

pF

UNIT

V

A

O:70~140, Y:120~240

2003. 3. 5

Revision No : 0

1/2

KTA539Y Related Products

	KTA539Y	KTA539O
Description	Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN	Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN
Parts packaging code	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.2 A	0.2 A
Collector-emitter maximum voltage	45 V	45 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	120	70
JEDEC-95 code	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz

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