TS4448 RW
350mW
High Speed SMD Switching Diode
Small Signal Diode
1005
A
D
B
C
Features
Designed for mounting on small surface.
Extremely thin/leadless package
High mounting capability,strong surage with stand,
high reliability.
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
E
Dimensions
A
B
C
D
E
Unit (mm)
Min
2.40
1.10
0.70
Typ.
Typ.
Max
2.60
1.30
0.90
0.50
1.00
Unit (inch)
Min
0.043
0.027
Typ.
Typ.
Max
0.051
0.035
0.02
0.04
0.095 0.102
Mechanical Data
Case :1005 standard package, molded plastic
Terminal: Gold plated, solderable
per MIL-STD-750, method 2026 guaranteed
High temperature soldering guaranteed: 260
°C/10s
Polarity : Indicated by cathode band
Weight : 0.006 gram (approximately)
Ordering Information
Part No.
TS4448 RW
Package
1005
Packing
4Kpcs / 7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Reverse Voltage
Mean Forward Current
Non-Repetitive Peak Forward Surge Current
Pulse Width=
Pulse Width=
1
μsec
I
FSM
RθJA
T
J
, T
STG
2.0
1.0
500
-40 to + 125
°C/W
°C
A
8.3 msec
Symbol
P
D
V
RRM
I
O
Value
200
100
125
Units
mW
V
mA
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
Electrical Characteristics
Type Number
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
I
F
=
I
F
=
V
R
=
V
R
=
(Note3)
(Note 2)
5mA
100mA
20V
80V
Symbol
V
(BR)
V
F
I
R
C
J
Trr
Min
-
0.62
-
-
-
-
Max
80
0.72
1.00
25
100
9.0
9
Units
V
V
nA
pF
ns
V
R
=0, f=1.0MHz
Notes:1. Valid provided that electrodes are kept at ambient temperature
Notes:2. Test Condition : I
R
=100μA
Notes:3. Test Condition : I
F
=I
R
=10mA, R
L
=100Ω, I
RR
=1mA
Version :
C09
TS4448 RW
350mW
High Speed SMD Switching Diode
Small Signal Diode
Rating and Sharacteristic Curves
FIG 1 Typical Forward Characteristics
1000
100.00
FIG 2 Reverse Current vs Reverse
Forward Current (mA)
100
Reverse Current (uA)
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Ta=25°C
10
1
0.1
0.01
0
0.2
0.4
10.00
1.00
0.10
0.01
0
20
40
60
80
100
120
140
Forward Voltage (V)
Reverse Voltage (V)
FIG 3 Admissible Power Disspation Curve
350
1.2
FIG 4 Typical Junction Capacitance
FIG 4 Admissible Power Disspation Curve
Junction Capacitance (pF)
Power Dissipation (mW)
280
210
140
70
0
0
25
50
75
100
125
150
1.1
1
0.9
0.8
0.7
0.6
0
2
4
6
8
10
Ambient Tempeture (°C)
Reverse Voltage (V)
FIG 5 Forward Resistance vs. Forward Current
10000
Forward Resistance (Ώ)
1000
100
10
1
0.0
0.1
1.0
10.0
100.0
Version :
C09
MCU
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