Trench Gate Power
MOSFET HiperFET
TM
N-Channel Enhancement Mode
Avalanche Rated
IXFA102N15T
IXFH102N15T
IXFP102N15T
V
DSS
I
D25
R
DS(on)
t
rr
= 150V
= 102A
≤
18mΩ
Ω
≤
120ns
TO-263 (IXFA)
G
S
(TAB)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
LRMS
I
DM
I
A
E
AS
dV/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
F
C
Weight
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
Lead Current Limit, RMS
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
175°C
T
C
= 25°C
Maximum Ratings
150
150
±
20
±
30
102
75
300
51
750
20
455
-55 ... +175
175
-55 ... +175
V
V
V
V
A
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
°C
Nmlb.in.
N/lb.
g
g
g
TO-220 (IXFP)
G
D S
(TAB)
TO-247 (IXFH)
G
D
(TAB)
S
D = Drain
TAB = Drain
G = Gate
S = Source
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque
Mounting Force
TO-263
TO-220
TO-247
300
260
Features
International Standard Packages
Avalanche Rated
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
(TO-220 & TO-247)
1.13 / 10
(TO-263)
10..65 / 2.2..14.6
2.5
3.0
6.0
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 150°C
Characteristic Values
Min.
Typ.
Max.
150
2.5
5.0
V
V
±
200 nA
5
μA
750
μA
18 mΩ
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100045A(04/09)
IXFA102N15T IXFH102N15T
IXFP102N15T
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCH
(TO-220)
(TO-247)
0.50
0.21
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 25A
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5
•
V
DSS
, I
D
= 0.5
• I
D25
R
G
= 3.3Ω (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min. Typ.
Max.
50
80
5220
685
95
20
14
25
22
87
23
31
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.33
°C/W
°C/W
°C/W
Pins:
1 - Gate
2 - Drain
TO-220 (IXFP) Outline
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= 100A, V
GS
= 0V, Note 1
I
F
= 51A, -di/dt = 100A/μs
V
R
= 75V, V
GS
= 0V
6.2
236
Characteristic Values
Min.
Typ.
Max.
102
400
1.3
A
A
V
∅
P
TO-247 (IXFH) Outline
120 ns
A
nC
1
2
3
Note 1:
Pulse test, t
≤
300μs; duty cycle, d
≤
2%.
TO-263 (IXFA) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source
Dim.
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
∅P
Q
R
S
Millimeter
Min.
Max.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
3.55
5.89
4.32
6.15
5.3
2.54
2.6
1.4
2.13
3.12
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
BSC
Inches
Min.
Max.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205
.780
.140
0.232
.170
242
.209
.102
.098
.055
.084
.123
.031
.845
.640
0.225
.800
.177
.144
0.252
.216
BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFA102N15T IXFH102N15T
IXFP102N15T
Fig. 1. Output Characteristics
@ 25ºC
110
100
90
80
V
GS
= 15V
10V
9V
8V
7V
300
V
GS
= 15V
10V
9V
Fig. 2. Extended Output Characteristics
@ 25ºC
250
I
D
- Amperes
I
D
- Amperes
70
60
50
40
30
20
10
0
0.0
0.2
0.4
0.6
0.8
1.0
200
8V
150
7V
100
6V
50
6V
0
1.2
1.4
1.6
0
2
4
6
8
10
12
14
16
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics
@ 150ºC
110
100
90
80
V
GS
= 15V
10V
9V
8V
3.0
2.6
7V
2.2
Fig. 4. R
DS(on)
Normalized to I
D
= 51A Value
vs. Junction Temperature
V
GS
= 10V
I
D
- Amperes
70
60
50
40
30
20
10
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
5V
6V
R
DS(on)
- Normalized
I
D
= 102A
1.8
1.4
1.0
0.6
0.2
-50
-25
0
25
50
75
100
125
150
175
I
D
= 51A
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 51A Value
vs. Drain Current
5.0
4.5
4.0
V
GS
= 10V
T
J
= 175ºC
60
80
70
Fig. 6. Drain Current vs. Case Temperature
External Lead Current Limit
R
DS(on)
- Normalized
3.0
2.5
2.0
1.5
1.0
0.5
0
40
80
120
160
200
240
280
T
J
= 25ºC
I
D
- Amperes
3.5
50
40
30
20
10
0
-50
-25
0
25
50
75
100
125
150
175
I
D
- Amperes
T
C
- Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
IXFA102N15T IXFH102N15T
IXFP102N15T
Fig. 7. Input Admittance
160
140
120
100
80
60
40
20
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
T
J
= 150ºC
25ºC
- 40ºC
120
110
100
90
T
J
= - 40ºC
Fig. 8. Transconductance
g
f s
- Siemens
I
D
- Amperes
80
70
60
50
40
30
20
10
0
0
20
40
60
25ºC
150ºC
80
100
120
140
160
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
300
275
250
225
10
9
8
7
V
DS
= 75V
I
D
= 51A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
200
175
150
125
100
75
50
25
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
T
J
= 150ºC
T
J
= 25ºC
V
GS
- Volts
6
5
4
3
2
1
0
0
10
20
30
40
50
60
70
80
90
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
1000.0
Fig. 12. Forward-Bias Safe Operating Area
Capacitance - PicoFarads
Ciss
100.0
R
DS(on)
Limit
25µs
100µs
Coss
I
D
- Amperes
1,000
10.0
1ms
100
Crss
1.0
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
0.1
0
5
10
15
20
25
30
35
40
1
10
100
1000
DC
10ms
100ms
f
= 1 MHz
10
V
DS
- Volts
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_102N15T(6E)9-30-08
IXFA102N15T IXFH102N15T
IXFP102N15T
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
19
18
17
R
G
= 3.3Ω
V
GS
= 10V
V
DS
= 75V
18
R
G
= 3.3Ω
17
V
GS
= 10V
V
DS
= 75V
T
J
= 125ºC
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
t
r
- Nanoseconds
16
15
14
13
12
I
D
t
r
- Nanoseconds
16
I
D
= 102A
15
= 51A
14
T
J
= 25ºC
13
11
10
25
35
45
55
65
75
85
95
105
115
125
12
50
55
60
65
70
75
80
85
90
95
100
105
T
J
- Degrees Centigrade
I
D
- Amperes
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
100
90
80
32
30
29
28
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
40
30
38
36
t
r
V
DS
= 75V
t
d(on)
- - - -
I
D
= 102A
T
J
= 125ºC, V
GS
= 10V
t
f
V
DS
= 75V
t
d(off)
- - - -
28
R
G
= 3.3Ω, V
GS
= 10V
t
d(on)
- Nanoseconds
t
d(off)
- Nanoseconds
t
r
- Nanoseconds
t
f
- Nanoseconds
70
60
50
40
30
20
10
0
2
26
24
22
20
I
D
= 51A
18
16
14
12
27
26
25
24
23
22
21
20
25
34
32
I
D
= 51A
30
28
26
24
I
D
= 102A
22
20
125
4
6
8
10
12
14
16
18
20
35
45
55
65
75
85
95
105
115
R
G
- Ohms
T
J
- Degrees Centigrade
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
26
42
280
240
200
160
120
80
40
0
2
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
160
t
f
V
DS
= 75V
t
d(off)
- - - -
25
T
J
= 125ºC
38
T
J
= 125ºC, V
GS
= 10V
140
t
d(off)
- Nanoseconds
t
f
- Nanoseconds
24
t
f
V
DS
= 75V
t
d(off)
- - - -
34
t
f
- Nanoseconds
120
I
D
= 102A
100
80
60
40
20
t
d(off)
- Nanoseconds
R
G
= 3.3Ω, V
GS
= 10V
23
30
I
D
= 51A
22
26
21
T
J
= 25ºC
22
20
50
55
60
65
70
75
80
85
90
95
100
18
105
4
6
8
10
12
14
16
18
20
I
D
- Amperes
R
G
- Ohms
© 2009 IXYS CORPORATION, All Rights Reserved
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