
10pF, 30V, SILICON, VARIABLE CAPACITANCE DIODE
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | Cobham Semiconductor Solutions |
| package instruction | O-XEMW-N2 |
| Reach Compliance Code | unknown |
| Other features | LOW LEAKAGE |
| Minimum breakdown voltage | 30 V |
| Shell connection | CATHODE |
| Configuration | SINGLE |
| Diode Capacitance Tolerance | 10% |
| Nominal diode capacitance | 10 pF |
| Diode component materials | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE |
| JESD-30 code | O-XEMW-N2 |
| JESD-609 code | e4 |
| Humidity sensitivity level | NOT SPECIFIED |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -65 °C |
| Package body material | UNSPECIFIED |
| Package shape | ROUND |
| Package form | MICROWAVE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Maximum power dissipation | 0.1 W |
| Certification status | Not Qualified |
| minimum quality factor | 2000 |
| surface mount | YES |
| Terminal surface | GOLD |
| Terminal form | NO LEAD |
| Terminal location | END |
| Maximum time at peak reflow temperature | NOT SPECIFIED |