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MSV38,092-E28

Description
Variable Capacitance Diode, KU Band, 9.88pF C(T), 45V, Silicon, CERAMIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size595KB,4 Pages
ManufacturerCobham Semiconductor Solutions
Environmental Compliance
Download Datasheet Parametric View All

MSV38,092-E28 Overview

Variable Capacitance Diode, KU Band, 9.88pF C(T), 45V, Silicon, CERAMIC PACKAGE-2

MSV38,092-E28 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCobham Semiconductor Solutions
package instructionO-CDSO-F2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage45 V
ConfigurationSINGLE
Diode Capacitance Tolerance10.12%
Nominal diode capacitance9.88 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandKU BAND
JESD-30 codeO-CDSO-F2
JESD-609 codee4
Number of components1
Number of terminals2
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.1 W
Certification statusNot Qualified
minimum quality factor1800
surface mountYES
Terminal surfaceGOLD
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
45 V Silicon Varactor Diodes
MSV38,000 Series
Description
The work horse of varactors these diodes are built tough with
fully passivated mesa construction and Aeroflex / Metelics tri-
metallization. Featuring a nominal gamma of 0.46 these diodes
find application in tunable filters and oscillators up to 18 GHz.
Features
0 to 45 Volt tuning voltage
Tuning ratios up to 5.5 typical
Screening per MIL-PRF-19500
and MIL-PRF-35834 available
Absolute Maximum Ratings
Parameters
Reverse Voltage
Forward Current
Power Dissipation
Chip
E28, E28X & 0805-2
H20, P55 & T86
Operating Temperature
Chip
E28, E28X & 0805-2
H20, P55 & T86
Storage Temperature
Soldering Temperature
Chip
Packaged
45 V
100 mA
250 mW at T
C
= 25
°C,
derate linearly to zero at T
C
= +200
°C
100 mW at T
A
= 25
°C,
derate linearly to zero at T
A
= +1
°C
50
100 mW at T
A
= 25
°C,
derate linearly to zero at T
A
= +200
°C
-65
°C
to +200
°C
-65
°C
to +1
°C
50
-65
°C
to +200
°C
Same as operating temperature.
+320
°C
for 10 seconds
+260
°C
peak per JEDEC J-STD-20C
Rating
Chip
Electrical Specifications,
T
A
= 25
°C
Model
MSV38,060
MSV38,064
MSV38,067
MSV38,069
MSV38,075
MSV38,082
MSV38,087
MSV38,092
Test Conditions
V
BR
MIN
V
45
45
45
45
45
45
45
45
I
R
=
10 A
C
J
MIN
pF
0.36
0.54
0.72
0.90
1.62
3.42
5.22
8.82
Tuning Ratio
MAX
pF
0.44
0.66
0.88
1.10
1.98
4.18
6.38
10.78
NOM
pF
0.4
0.6
0.8
1.0
1.8
3.8
5.8
9.8
V
R
= 4 V
F = 1 MHz
MIN
4.5
4.5
4.5
5.0
5.0
5.0
5.0
5.0
TYP
5.0
5.0
5.0
5.5
5.5
5.5
5.5
5.5
Q
MIN
4,500
3,200
3,000
2,800
2,600
2,100
1,800
1,800
V
R
= 4 V
F = 50
MHz
R
S
MAX
1.8
1.7
1.3
1.0
0.7
0.4
0.3
0.2
F = 1 GHz
Outline
C1
2
C1
2
C1
2
C1
2
C1
2
C1
2
C1
2
C22
V
R
= 0 V & V
R
= 45 V
F = 1 MHz
Revision Date: 10/05/05

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