APT5022BNFR datasheet, PDF - EEWORLD Datasheet

APT5022BNFR: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size926KB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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APT5022BNFR Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
Maker	Microsemi
Parts packaging code	TO-247AD
package instruction	,
Contacts	3
Reach Compliance Code	compliant
Configuration	Single
Maximum drain current (Abs) (ID)	27 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	360 W
surface mount	NO

	APT5022BNFR	APT5020BNFR
Description	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Maker	Microsemi	Microsemi
Parts packaging code	TO-247AD	TO-247AD
Contacts	3	3
Reach Compliance Code	compliant	compliant
Configuration	Single	Single
Maximum drain current (Abs) (ID)	27 A	28 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	360 W	360 W
surface mount	NO	NO

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