Preliminary
TSM9426D
20V Dual N-Channel MOSFET w/ESD Protected
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(mΩ)
14 @ V
GS
= 10V
20
16 @ V
GS
= 4.5V
22 @ V
GS
= 2.5V
30 @ V
GS
= 1.8V
SOP-8
Pin Definition:
1. Source 1
8. Drain 1
2. Gate 1
7. Drain 1
3. Source 2
6. Drain 2
4. Gate 2
5. Drain 2
I
D
(A)
9.4
8
6
4
Features
●
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
ESD Protect 2KV
Block Diagram
Application
●
●
Specially Designed for Li-on Battery Packs
Battery Switch Application
Ordering Information
Part No.
TSM9426DCS RL
Package
SOP-8
Packing
2.5Kpcs / 13” Reel
Dual N-Channel MOSFET
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@4.5V.
Pulsed Drain Current, V
GS
@4.5V
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
a,b
o
o
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
T
J
, T
STG
Ta = 25 C
Ta = 75 C
Limit
20
±12
9.4
40
3
2
1.28
+150
-55 to +150
Unit
V
V
A
A
A
W
o
o
C
C
Thermal Performance
Parameter
Junction to Foot (Drain) Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t
≤
5 sec.
Symbol
RӨ
JF
RӨ
JA
Limit
45
62.5
Unit
o
o
C/W
C/W
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Version: Preliminary
Preliminary
TSM9426D
20V Dual N-Channel MOSFET w/ESD Protected
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
V
GS
= 0V, I
D
= 250uA
V
DS
= V
GS
, I
D
= 250uA
V
GS
= ±10V, V
DS
= 0V
V
DS
= 16V, V
GS
= 0V
V
DS
=5V, V
GS
= 4.5V
V
GS
= 10V, I
D
= 9.4A
Drain-Source On-State Resistance
V
GS
= 4.5V, I
D
= 8A
V
GS
= 2.5V, I
D
= 6A
V
GS
= 1.8V, I
D
= 4A
Forward Transconductance
Diode Forward Voltage
Dynamic
b
Conditions
Symbol
BV
DSS
V
GS(TH)
I
GSS
I
DSS
I
D(ON)
Min
20
0.5
--
--
30
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
0.75
--
--
--
11
12.6
16.5
23.4
37
0.72
4.65
1.12
3.72
36.45
183.88
14.57
487.6
800.4
1728
6180
Max
--
1.0
±10
10
--
14
16
22
30
--
1
6.05
1.46
4.84
--
--
--
--
--
--
--
Unit
V
V
uA
uA
A
R
DS(ON)
mΩ
V
DS
= 5V, I
D
= 8A
I
S
= 1A, V
GS
= 0V
g
fs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
S
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
V
DS
= 10V, I
D
= 8A,
V
GS
= 4.5V
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
nC
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
V
DD
= 10V, R
L
= 1.2Ω,
I
D
= 1A, V
GEN
= 10V,
R
G
= 3Ω
nS
Turn-Off Fall Time
t
f
Notes:
a. pulse test: PW 300µS, duty cycle 2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
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Version: Preliminary
Preliminary
TSM9426D
20V Dual N-Channel MOSFET w/ESD Protected
SOP-8 Mechanical Drawing
DIM
A
B
C
D
F
G
K
M
P
R
SOP-8 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
4.80
5.00
0.189
0.196
3.80
4.00
0.150
0.157
1.35
1.75
0.054
0.068
0.35
0.49
0.014
0.019
0.40
1.25
0.016
0.049
1.27BSC
0.05BSC
0.10
0.25
0.004
0.009
0º
7º
0º
7º
5.80
6.20
0.229
0.244
0.25
0.50
0.010
0.019
Marking Diagram
Y
= Year Code
M
= Month Code
(A=Jan,
B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L
= Lot Code
3/4
Version: Preliminary
Preliminary
TSM9426D
20V Dual N-Channel MOSFET w/ESD Protected
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
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and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
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4/4
Version: Preliminary