Z0103/07/09 series
Triacs
Rev. 02 — 12 September 2002
Product data
1. Product profile
1.1 Description
Passivated triacs in conventional and surface mounting packages. Intended for use in
applications requiring high bidirectional transient and blocking voltage capability.
Available in a range of gate current sensitivities for optimum performance.
Product availability:
Z0103MA; Z0103NA; Z0107MA; Z0107NA; Z0109MA; Z0109NA in SOT54B
Z0103MN; Z0103NN; Z0107MN; Z0107NN; Z0109MN; Z0109NN in SOT223.
1.2 Features
s
Blocking voltage to 800 V (NA and NN
s
1 A on-state RMS current.
types)
1.3 Applications
s
Home appliances
s
Fan controllers
s
Small motor control
s
Small loads in industrial process
control.
2. Pinning information
Table 1:
Pin
1
2
3
1
2
3
4
Pinning - SOT54B (TO-92), SOT223, simplified outline and symbol
Description
terminal 2 (T2)
gate (G)
terminal 1 (T1)
1
Simplified outline
SOT54B
(TO-92)
Symbol
4
T2
2
3
terminal 1 (T1)
terminal 2 (T2)
SOT223
G
MSB033
gate (G)
1
2
3
MSB002 - 1
T1
Top view
MBL300
terminal 2 (T2)
SOT54B (TO-92)
SOT223
Philips Semiconductors
Z0103/07/09 series
Triacs
3. Ordering information
3.1 Ordering options
Table 2:
Z0103MA
Z0103NA
Z0107MA
Z0107NA
Z0109MA
Z0109NA
Z0103MN
Z0103NN
Z0107MN
Z0107NN
Z0109MN
Z0109NN
Ordering information
Voltage (V
DRM
)
600 V
800 V
600 V
800 V
600 V
800 V
600 V
800 V
600 V
800 V
600 V
800 V
Gate Sensitivity (I
GT
)
3 mA
3 mA
5 mA
5 mA
10 mA
10 mA
3 mA
3 mA
5 mA
5 mA
10 mA
10 mA
Package
SOT54B (TO-92)
SOT54B (TO-92)
SOT54B (TO-92)
SOT54B (TO-92)
SOT54B (TO-92)
SOT54B (TO-92)
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
Part Number
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DRM
repetitive peak off-state voltage
Z0103/07/09MA; Z0103/07/09MN
Z0103/07/09NA; Z0103/07/09NN
V
RRM
repetitive peak reverse voltage
Z0103/07/09MA; Z0103/07/09MN
Z0103/07/09NA; Z0103/07/09NN
I
TSM
non-repetitive peak on-state current
full sine wave; T
j
= 25
°C
prior to surge;
Figure 2
and
Figure 3
t = 20 ms
t = 16.7 ms
I
T(RMS)
RMS on-state current
SOT223
SOT54B (TO-92)
I
2
t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
9397 750 10102
Conditions
25
°C ≤
T
j
≤
125
°C
Min
-
-
Max
600
800
600
800
Unit
V
V
V
V
25
°C ≤
T
j
≤
125
°C
-
-
-
-
-
-
-
-
-
-
-
−40
−40
8
8.5
1
1
0.35
20
1.0
2.0
0.1
+150
+125
A
A
A
A
A
2
s
A/µs
A
W
W
°C
°C
2 of 12
all conduction angles;
Figure 4
T
sp
= 90
°C
T
lead
= 50
°C
t
=
10 ms
I
TM
= 1.0 A; I
G
= 2 x I
GT
; dI
G
/dt = 100 mA/µs
t
p
= 20
µs
over any 20 ms period
I
2
t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 — 12 September 2002
Philips Semiconductors
Z0103/07/09 series
Triacs
1.6
Ptot
(W)
1.2
α
α
003aaa199
10
ITSM
(A)
8
003aaa200
α
=
180°
120°
90°
6
0.8
60°
30°
4
0.4
2
0
0
0.4
0.8
IT(RMS) (A)
1.2
0
1
10
10
2
n
10
3
α
= conduction angle
n = number of cycles at f = 50 Hz
Fig 1. Maximum on-state power dissipation as a
function of RMS on-state current; typical
values.
Fig 2. Maximum permissible non-repetitive peak
on-state current as a function of number of
cycles for sinusoidal currents; typical values.
10
2
ITSM
(A)
10
δI
T/δt limit
003aaa207
1.2
IT(RMS)
(A)
0.8
SOT54B
(Tlead)
003aaa201
SOT223
(Tsp)
1
0.4
10
-1
10
-5
10
-4
10
-3
ts (s)
10
-2
0
0
50
100
150
Tlead, Tsp (°C)
Fig 3. Maximum permissible non-repetitive peak
on-state current as a function of surge duration
for sinusoidal currents; typical values.
Fig 4. Maximum permissible RMS on-state current as
a function of lead temperature and solder point
temperature; typical values.
9397 750 10102
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 — 12 September 2002
3 of 12
Philips Semiconductors
Z0103/07/09 series
Triacs
5. Thermal characteristics
Table 4:
Symbol
R
th(j-sp)
R
th(j-lead)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to solder
point for SOT223
thermal resistance from junction to lead for
SOT54B (TO-92)
thermal resistance from junction to ambient
SOT223
SOT54B (TO-92)
minimum footprint; mounted on a PCB
vertical in free air
-
-
60
-
K/W
K/W
150 -
Conditions
Figure 5
Figure 5
Min Typ Max Unit
-
-
-
-
25
60
K/W
K/W
5.1 Transient thermal impedance
10
a
1
SOT223
10
-1
003aaa206
SOT54B
10
-2
10
-3
10
-4
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
2
tp (s)
10
3
Z
th
(
j
–
lead
)
a
=
---------------------------
for SOT54B (TO-92)
R
th
(
j
–
lead
)
Z
th
(
j
–
sp
)
a
=
----------------------
for SOT223
-
R
th
(
j
–
sp
)
Fig 5. Transient thermal impedance from junction to lead and junction to solder point as a function of pulse
duration.
9397 750 10102
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 — 12 September 2002
4 of 12
Philips Semiconductors
Z0103/07/09 series
Triacs
6. Characteristics
Table 5:
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
I
GT
Parameter
gate trigger current
Z0103MA/MN/NA/NN
Z0107MA/MN/NA/NN
Z0109MA/MN/NA/NN
Z0103MA/MN/NA/NN
Z0107MA/MN/NA/NN
Z0109MA/MN/NA/NN
I
L
latching current
Z0103MA/MN/NA/NN
Z0107MA/MN/NA/NN
Z0109MA/MN/NA/NN
Z0103MA/MN/NA/NN
Z0107MA/MN/NA/NN
Z0109MA/MN/NA/NN
I
H
holding current
Z0103MA/MN/NA/NN
Z0107MA/MN/NA/NN
Z0109MA/MN/NA/NN
V
T
V
GT
I
D
dV
D
/dt
on-state voltage
gate trigger voltage
off-state leakage current
critical rate of rise of
off-state voltage
Z0103MA/MN/NA/NN
Z0107MA/MN/NA/NN
Z0109MA/MN/NA/NN
dV
com
/dt
critical rate of change of
commutating voltage
Z0103MA/MN/NA/NN
Z0107MA/MN/NA/NN
Z0109MA/MN/NA/NN
V
D
= 400 V; I
T
= 1 A; T
j
= 110
°C;
dI
com
/dt = 0.44 A/ms; gate open
0.5
1
2
-
-
-
-
-
-
V/µs
V/µs
V/µs
Figure 6
V
D
= 12 V; R
L
= 30
Ω;
T
j
= 25
°C;
Figure 11
V
D
= V
DRM
; R
L
= 3.3 kΩ; T
j
= 125
°C;
Figure 11
V
D
= V
DRM(max)
; V
R
= V
RRM(max);
T
j
= 125
°C
V
D
= 0.67 V
DRM(max)
; T
j
= 110
°C;
exponential
waveform; gate open;
Figure 10
10
20
50
-
-
-
-
-
-
V/µs
V/µs
V/µs
Dynamic characteristics
I
T
= 50 mA;
Figure 8
-
-
-
-
-
0.2
-
-
-
-
1.3
-
-
-
7
10
10
1.6
1.3
-
500
mA
mA
mA
V
V
V
µA
V
D
= 12 V; R
L
= 30
Ω;
T2+ G−;
Figure 7
V
D
= 12 V; R
L
= 30
Ω;
T2+ G+; T2− G−; T2− G+;
Figure 7
Conditions
V
D
= 12 V; R
L
= 30
Ω;
T2+ G+; T2+ G−; T2− G−;
Figure 9
Min
Typ
Max
Unit
Static characteristics
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3
5
10
5
7
10
7
10
15
15
20
25
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
D
= 12 V; R
L
= 30
Ω;
T2− G+;
Figure 9
-
-
-
-
-
-
-
-
-
9397 750 10102
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 — 12 September 2002
5 of 12
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