5.6-7.1 GHz Linear 4W Power Amplifier
6x6mm QFN
October 2009 - Rev 08-Oct-09
P1039-QJ
Features
16.5 dB Small Signal Gain
49 dBm Third Order Intercept Point (OIP3)
4W Saturated RF Power
Integrated Power Detector
6x6mm QFN Package, RoHS Compliant
100% RF Testing
General Description
The XP1039-QJ is a packaged linear power amplifier
that operates over the 5.6-7.1 GHz frequency band. The
device provides 16.5 dB gain and 49 dBm Output Third
Order Intercept Point (OIP3) with up to 4W of saturated
RF power. The packaged amplifier comes in an industry
standard, fully molded 6x6mm QFN package and is
comprised of a two stage power amplifier with an
integrated, temperature compensated on-chip power
detector. The device includes on-chip ESD protection
structures and DC by-pass capacitors to ease the
implementation and volume assembly of the
packaged part. The XP1039-QJ provides an alternative
solution to discrete power FETS with the added
advantages of higher gain and linearity in a standard
QFN package. The device is well suited for
Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
Absolute Maximum Ratings
1,2,3
+8.5V
-2.5V
600 mA
1200 mA
6V
6V
+25 dBm
175 ºC
160 ºC
Continuous Power Dissipation (Pdiss) at 85 ºC
11.2 W
Thermal Resistance (Tchannel=160 ºC) 6.8 ºC/W
-40 to +85 ºC
Operating Temperature (Ta)
-65 to +150 ºC
Storage Temperature (Tstg)
Mounting Temperature
See solder reflow profile
ESD Min. - Machine Model (MM)
Class A
ESD Min. - Human Body Model (HBM)
Class 1A
MSL Level
MSL3
Supply Voltage (Vd)
Supply Voltage (Vgg)
Supply Current (Id1)
Supply Current (Id2)
Detector Pin (Vdet)
Detector Ref Pin (Vref )
Input Power (Pin)
Abs. Max. Junction/Channel Temp
Max. Operating Junction/Channel Temp
(1) Operation of this device above any one of these parameters may cause
permanent damage.
(2) Channel temperature directly affects a device’s MTTF. Channel temperature
should be kept as low as possible to maximize lifetime.
(3) For saturated performance it recommended that the sum of (2*Vdd + abs(Vgg)) <17
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Units
Min.
Typ.
Max.
Frequency Range (f )
GHz
7.1
5.6
-
Small Signal Gain (S21)
dB
19.0
15.5
16.5
Input Return Loss (S11)
dB
10.0
Output Return Loss (S22)
dB
8.0
Reverse Isolation (S12)
dB
45.0
P1dB
dBm
34.5
35.5
Psat
dBm
36.0
OIP3 @ 25 dBm Pout
dBm
46
50.0
OIP3 @ 28.5 dBm Pout
dBm
46
49.0
PAE at Psat
%
24.0
Detector Power Range
dBm
35.0
0.0
-
Drain Bias Voltage (Vd)
VDC
8.0
Detector Bias Voltage (Vdet,ref )
VDC
5.0
Gate Bias Voltage (Vg1,2,3)
VDC
-2.0
-1.0
Quiescent Supply Current (Idq)
mA
1400
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice.
©2009
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
5.6-7.1 GHz Linear 4W Power Amplifier
6x6mm QFN
October 2009 - Rev 08-Oct-09
P1039-QJ
Power Amplifier Measurements
XP1039-QJ: Gain vs Freq
Vd=8V, Id=1400mA, Temp=25degC
20
19
18
17
Gain (dB)
16
15
14
13
12
11
10
5.6
5.9
6.2
6.5
6.8
7.1
Frequency (GHz)
31
30
5.6
5.9
6.2
6.5
6.8
7.1
Frequency (GHz)
P1dB (dBm)
40
39
38
37
36
35
34
33
32
XP1039-QJ: P1dB vs Freq
Vd=8V, Id=1400mA, Temp=25degC
XP1039-QJ: OIP3 vs Freq
Ptotal=28.5dBm, Vd=8V, Id=1400mA, Temp=25degC
56
54
52
OIP3 (dBm)
50
48
46
44
42
40
5.6
5.9
6.2
6.5
6.8
7.1
Frequency (GHz)
P1dB (dBm)
XP1039-QJ: P1dB vs Freq
Vd=8V, Id=1200mA/1400mA, Temp=25degC
40
39
38
37
36
35
34
33
32
31
30
5.6
5.9
6.2
6.5
6.8
7.1
Frequency (GHz)
1200mA
1400mA
XP1039-QJ: OIP3 vs Freq
Ptotal=28.5dBm, Vd=8V, Id=1200mA/1400mA, Temp=25degC
60
55
50
OIP3 (dBm)
OIP3 (dBm)
45
40
35
30
25
20
5.6
5.9
6.2
6.5
6.8
7.1
Frequency (GHz)
1200mA
1400mA
XP1039-QJ: OIP3 vs Freq
Ptotal=25dBm, Vd=8V, Id=1200mA/1400mA, Temp=25degC
60
55
50
45
40
35
30
25
20
5.6
5.9
6.2
6.5
6.8
7.1
Frequency (GHz)
1200mA
1400mA
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 6
Characteristic Data and Specifications are subject to change without notice.
©2009
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
5.6-7.1 GHz Linear 4W Power Amplifier
6x6mm QFN
October 2009 - Rev 08-Oct-09
P1039-QJ
Package Dimensions / Layout
Functional Schematic
nc
24
GND
23
GND GND
22
21
GND
20
nc
19
Pin Designations
18
17
16
15
14
13
VD2
GND
GND
RF OUT
Vdet
Vref
Pin Number Pin Name Pin Function
1
VD1
Drain 1 Bias
2-3
GND
Ground
4
RF In
RF Input
5
VG1
Gate 1 Bias
6
VG2
Gate 2 Bias
7-12
nc
Not Connected
13
Vref Pwr Det Reference
14
Vdet
Pwr Detector
15
RF Out
RF Output
16-17
GND
Ground
18
VD2
Drain 2 Bias
19
nc
Not Connected
20-23
GND
Ground
24
nc
Not Connected
Nominal Value
8.0V, 466mA
GND
~ -0.7V
~ -0.7V
GND
5.0V (100k )
5.0V (100k )
GND
8.0V, 933 mA
GND
GND
GND
VD1
GND
GND
RF IN
VG1
VG2
1
2
3
4
5
6
10
11
nc
nc
nc
nc
nc
nc
Page 3 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
©2009
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
12
7
8
9
5.6-7.1 GHz Linear 4W Power Amplifier
6x6mm QFN
October 2009 - Rev 08-Oct-09
P1039-QJ
App Note [1]
Biasing
– As shown in the Pin Designations table, the device is operated by biasing Vd1,2 at 8.0V. The nominal drain currents are
Id1=466mA and Id2=933mA, and this ratio of 1:2 between the first and second stage drain currents should be maintained for whatever drain
current levels are used. The typical gate voltages needed are -0.7V. Make sure to sequence the applied voltage to ensure negative bias is available
before applying the positive drain supply.
For linear applications it is recommended that active bias be used to keep the currents known and constant, and to maintain the best performance
over temperature. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a
low-power operational amplifier, with a low value resistor in series with the drain supply used to sense the current.
For applications where the device is running into saturation, high power levels will be achieved by fixing the drain currents at the nominal levels
with NO RF applied, and then operated with a fixed gate bias once RF is applied.
App Note [2] PWB Layout Considerations
- It is recommended to provide 100pF decoupling capacitors as close as possible to the pins of the
device, with additional larger decoupling capacitors further away. For example, in the Recommended Layout shown below, there are 100pF 0402
capacitors placed very near the device pins, and 1uF 0805 capacitors placed further away (the gate line shown without a 1uF capacitor (pin 6)
would have this capacitor further away on the other side of the screw).
Thermal management of the device is essential. It is recommended that measures such as copper-filled vias under the package, and post/screws for
top to bottom heat transfer are used (see Recommended Layout shown below). Adequate heat-sinking under the PWB is necessary in maintaining
the package base at a safe operating temperature.
App Note [3] Power Detector
- As shown in the schematic at right, the power
detector is implemented by providing +5V bias and measuring the difference in
output voltage with standard op-amp in a differential mode configuration.
Recommended Layout
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 6
Characteristic Data and Specifications are subject to change without notice.
©2009
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
5.6-7.1 GHz Linear 4W Power Amplifier
6x6mm QFN
October 2009 - Rev 08-Oct-09
P1039-QJ
MTTF
These numbers were calculated based on accelerated life test information and thermal model analysis received from
the fabricating foundry.
XP1039 MTTF (Hrs) vs Package Base Temp (ºC)
1.0E+12
1.0E+11
MTTF (Hrs)
1.0E+10
1.0E+09
1.0E+08
1.0E+07
1.0E+06
10
20
30
40
50
60
70
80
90
100
110
MTTF 9.2W Pdis
MTTF 10.2W Pdis
MTTF 11.2W Pdis
Package Base Temperature (ºC)
XP1039-QJ Operating Power De-rating Curve
(continuous)
12
10
8
Pdiss (W)
6
4
2
0
20
40
60
80
100
120
140
160
180
XP1050-QJ Power De-
rating
Package Base Temp (ºC)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 6
Characteristic Data and Specifications are subject to change without notice.
©2009
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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